The present disclosure provides a back-contact solar cell, a fabrication method, and a solar-cell assembly. In one aspect, a back-contact solar cell includes a solar-cell body and an isolating groove. The solar-cell body includes a silicon substrate, a first semiconductor layer in a first region of a back surface of the silicon substrate, a second semiconductor layer having a portion in a second region of the back surface, and a transparent conductive film layer stacked on the first and second semiconductor layers. The isolating groove extends through the second semiconductor layer and the transparent conductive film layer. An area of a cross section of the isolating groove decreases towards the silicon substrate, and the cross section is parallel to the silicon substrate.

A luminescent solar concentrator including a light propagation device, one or more photovoltaic cells, and one or more waveguides is provided. The light propagation device includes a plurality of nanostructures configured to permit preferential propagation of a wavelength range of light in one direction. The one or more photovoltaic cells are positioned adjacent an end of the light propagation device. The one or more waveguides are configured to guide light toward the one or more photovoltaic cells via total internal reflection within the luminescent solar concentrator.

Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

The method for preparing a solar cell includes providing a substrate having a first surface and a second surface opposite to the first surface; forming a doped layer and a first passivation layer stacked sequentially in a direction away from the substrate on the first surface; forming a second passivation layer on the second surface; forming multiple first grid line electrodes arranged at intervals on the surface of the first passivation layer away from the substrate, and forming multiple second grid line electrodes arranged at intervals on the surface of the second passivation layer away from the substrate; performing a laser processing on the multiple first grid line electrodes and an adjacent region of the multiple first grid line electrodes, and applying a reverse current between the multiple first grid line electrodes and the multiple second grid line electrodes.

A flexible, non-flat solar cell comprises a flexible substrate. A pn junction is on or in the flexible substrate. The solar cell has been flexed so as to have a non-flat geometry that results in an increased surface area of the flexed solar cell with respect to the surface area of a flat solar cell that is the same as the flexed solar cell except that the flat solar cell has a flat surface geometry that has the same projected area on a lateral plane as does the flexed solar cell.

Provided are a solar cell, a method for preparing a photovoltaic module, and a photovoltaic module. The solar cell includes: a substrate, a first dielectric layer and a first doped conductive layer. The substrate has a first surface and a second surface opposite to the first surface. The first surface includes alternating electrode regions and non-electrode regions, and transition regions, each respective transition region of the transition regions being abutted on one side by a respective electrode region of the electrode regions and on an opposing side by a respective non-electrode region of the non-electrode regions. The transition region includes a plurality of spaced first pyramid structures and a plurality of micro-convex structures, and a one-dimensional size of a bottom of a respective micro-convex structure is smaller than a one-dimensional size of a bottom of a respective first pyramid structure.

A silicon wafer texturing method and a textured silicon wafer. The texturing method includes: forming a pyramid textured surface on a silicon wafer; then carrying out a rounding treatment on the pyramid textured surface to form a rounded pyramid-shaped structure; and then forming pits on the rounded textured surface to finish the texturing, wherein the rounding treatment includes: successively performing a first treatment and a second treatment in a first mixed solution and a second mixed solution, the first mixed solution including HNO.sub.3 and HF, a mass fraction of HNO.sub.3 being greater than a mass fraction of HF, the second mixed solution including HNO.sub.3 and HF, and a mass fraction of HNO.sub.3 being less than a mass fraction of HF. For the obtained pits, a density of the pits is 10/cm.sup.2 to 100/cm.sup.2, a width is 0.01 m to 0.08 m, and a depth is 5 nm to 50 nm.

An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

The present disclosure discloses a solar cell and a photovoltaic module. In one example, a solar cell includes a silicon substrate; a first doped crystalline silicon region and a second doped crystalline silicon region that are arranged on a back surface of the silicon substrate; and an isolation groove, configured to isolate the first doped crystalline silicon region and the second doped crystalline silicon region. A textured structure with pyramidal structures is arranged at a bottom of the isolation groove, a distribution density of apexes of the pyramidal structures ranging from 25/100 m.sup.2 to 80/100 m.sup.2. The back surface of the silicon substrate includes an overlapping region where the first doped crystalline silicon region and the second doped crystalline silicon region overlaps, the overlapping region being a polished surface.

At least one surface of a cell body of a photovoltaic cell includes a first region and a second region that are not overlapped with each other. The first region is configured with a textured structure. The textured structure comprises one or more pyramid or inverted pyramid structures. The second region is configured with a plurality of pits.