H10F77/70

SOLAR CELL AND MANUFACTURING METHOD THEREOF, PHOTOVOLTAIC MODULE, AND PHOTOVOLTAIC SYSTEM
20250393339 · 2025-12-25 ·

A solar cell includes: a substrate including a first surface and a second surface arranged opposite to each other and a plurality of lateral surfaces adjacent to and located between the first surface and the second surface; a plurality of pyramid base shaped textured structures being constructed on the second surface and each of the lateral surfaces, wherein a minimum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the lateral surfaces is L1, a maximum side length of each of top surfaces of the pyramid base shaped textured structures arranged on the second surface is L2, and L1>L2; a doped conductive layer arranged on the first surface; and a passivated contact layer including a polysilicon doped conductive layer, the passivated contact layer being arranged on the second surface.

Solar cell, manufacturing method thereof, and photovoltaic module

A solar cell includes a semiconductor substrate, in which a rear surface of the semiconductor substrate having non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 m; a first passivation layer located on a front surface of the semiconductor substrate; first and second tunnel oxide layers located on the non-pyramid-shaped microstructures; first and second doped conductive layers located on a surface of the first and second tunnel oxide layers, the first and second doped conductive layer has different conductive types; a second passivation layer located on a surface of the first and second doped conductive layers; and electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.

Solar cell, tandem solar cell, and photovoltaic module

Provided are a solar cell, a method for preparing a solar cell, a tandem solar cell, and a photovoltaic module. The solar cell includes a substrate, a doped conductive layer, and a dielectric layer. The substrate has a first surface, where the first surface includes electrode regions and non-electrode regions that are alternatingly arranged along a first direction. The doped conductive layer is formed over the first surface of the substrate. The doped conductive layer includes first conductive portions and at least one second conductive portion. Each respective first conductive portion of the first conductive portions is formed over a respective electrode region of the electrode regions, and each respective second conductive portion of the at least one second conductive portion is formed over a part of a non-electrode region of the non-electrode regions. The dielectric layer is between the first surface and the doped conductive layer.

METHOD FOR PREPARING TOPCON SOLAR CELL AND TOPCON SOLAR CELL

The present application provides a method for preparing a TOPCON cell and a TOPCON cell. The preparation method includes steps of: double-sided texturing the silicon wafer multiple times. Polysilicon is deposited on the front side, and then phosphorus diffusion is performed to form a doped polysilicon layer and a phosphorosilicate glass; alternatively, the phosphorus diffusion is performed to form the phosphorus diffused layer and the phosphorosilicate glass. Laser grooving is performed to form localized emitters. After third double-sided texturing on the silicon wafer, the double-sided rounding is performed.

Solar cell emitter region fabrication with differentiated p-type and n-type architectures and incorporating dotted diffusion

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

SOLAR CELL, METHOD FOR MANUFACTURING THE SAME, PHOTOVOLTAIC DEVICE, AND PHOTOVOLTAIC SYSTEM
20260013260 · 2026-01-08 · ·

The application provides a solar cell, a manufacturing method, a photovoltaic device and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, an anti-reflection layer, a passivation contact layer, and a second passivation layer. The substrate includes opposite first and second surfaces, and side surfaces between the first and second surfaces. The doped conducting layer and the first passivation layer are sequentially stacked on the first surface. The anti-reflection layer is stacked on the first passivation layer and covers the first surface to cover the first passivation layer. The passivation contact layer is stacked on the second surface. The second passivation layer is stacked on the passivation contact layer and covers the second surface to cover the passivation contact layer. The anti-reflection layer or the second passivation layer covers at least part of at least one side surface of the substrate.

Semiconductor devices with structures for emitting or detecting light
12527134 · 2026-01-13 · ·

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

Solar roof panel system with edge and surface treatments

A roof-mounted solar power system for generating electrical power that includes a plurality of solar modules adapted for generating electrical power from sunlight, and with each of the plurality of solar modules having substantially the same size, aspect ratio and surface coloring. The plurality of solar modules are mounted on the deck of a roof to form a bank of solar modules having at least one irregular edge. The solar power system further includes one or more non-power generating edge treatments having substantially the same size, aspect ratio and surface coloring as the solar modules and that are adapted for installation along the irregular edge. Each edge treatment is adapted for a cutting away of at least one corner thereof to smooth the irregular edge of the bank of solar modules to a regular edge.

Method for manufacturing device comprising halide perovskite active layer, and power generation devices

A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

Visible light communication device, display substrate, display device and manufacturing method of the display substrate

The present disclosure provides a visible light communication device, a display substrate, a display device, and a manufacturing method of the display substrate. The visible light communication device includes: a protrusion structure arranged on a base substrate and protruding toward a photosensitive side of the visible light communication device; a first electrode covering the protrusion structure; a visible light sensing layer arranged at a side of the first electrode away from the protrusion structure; and a second electrode arranged at a side of the visible light sensing layer away from the first electrode. A surface of each of the first electrode, the visible light sensing layer and the second electrode away from the base substrate is provided with a protrusion facing the photosensitive side of the visible light communication device due to the protrusion structure.