The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180 , and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

Light-emitting sub-pixels and pixels for micro-light-emitting diode-based displays are provided. Also provided are methods of fabricating individual sub-pixels, pixels, and arrays of the pixels. The sub-pixels include a double-layered film that includes a coupling layer disposed over a light-emitting diode and a light-emission layer disposed over the coupling layer.

Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a top surface, a bottom surface, a plurality of lateral surfaces arranged between the top surface and the bottom surface, and a first electrode arranged on the bottom surface; a wavelength converting material covering a plurality of lateral surfaces; and a reflecting layer, formed on the wavelength converting material which is arranged on the top surface.

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality of luminescent regions, which are connected optically downstream from the at least one emitter surface. At least one harder one of the luminescent regions is embedded in another, softer one of the luminescent regions.

An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of die area of the opening region to the area of the masking region in the second region.

The present disclosure provides a LED package structure and a LED light-emitting device. The LED package structure comprises a LED chip and a wavelength converting layer covering the LED chip. The wavelength converting layer contains red phosphor, which has lower amount in edge portion than in center portion. It is possible to avoid direct or indirect excitation for generating red light in edge portion of the LED chip by adjusting the amount of red phosphor in edge portion to be lower, so that the color temperature in edge portion may be adjusted toward to high color temperature, and thus the phenomenon of yellow halo may be alleviated.