An organic light-emitting display device includes a driving transistor configured to control current to an organic light-emitting diode from a power voltage line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to a compensation gate electrode of the driving transistor, and a gate insulating layer interposed between a driving active region of the driving transistor and the driving gate electrode, and between a compensation active region of the compensation transistor and the compensation gate electrode. A dielectric constant in a first portion of the gate insulating layer between the driving active region and the driving gate electrode is greater than a dielectric constant in a second portion of the gate insulating layer between the compensation active region and the compensation gate electrode.

A thin film transistor includes an oxide semiconductor layer on a substrate, a gate insulating layer on the oxide semiconductor layer, a gate electrode on the gate insulating layer, which at least partially overlaps the oxide semiconductor layer, a interlayer insulating layer on the gate electrode, and a source electrode and a drain electrode on the interlayer insulating layer, the oxide semiconductor layer includes a channel portion which overlaps with the gate electrode and a connection portion which at least partially does not overlap the gate electrode, the source electrode and the drain electrode are in contact with the connection portion of the oxide semiconductor layer, the interlayer insulating layer is in contact with the connection portion of the oxide semiconductor layer, a hydrogen concentration of the connection portion is higher than a hydrogen concentration of the channel portion, and the interlayer insulating layer, the source electrode, and the drain electrode are in contact with the connection portion.

The present disclosure provides a display device which includes a substrate, a first polycrystalline semiconductor on the substrate and including a channel region, a source region, and a drain region of a first transistor, a first silicon oxide film on the first polycrystalline semiconductor, a first gate insulating film on the first silicon oxide film, a gate electrode of the first transistor on the first gate insulating film and overlapping the channel region of the first transistor, and a first interlayer insulating film on the gate electrode of the first transistor. A thickness ratio of the first silicon oxide film and the channel region of the first transistor is 1:13 to 1:16.

An active matrix substrate includes a substrate, a plurality of gate signal lines, and a gate drive circuit. The gate drive circuit includes a shift register having a plurality of stages. The plurality of stages are constituted by a plurality of unit circuits each including a plurality of oxide semiconductor TFTs. The plurality of oxide semiconductor TFTs include at least one first TFT and at least one second TFT having lower mobility than does the first TFT. The at least one second TFT includes an oxide semiconductor TFT that becomes highest in drain-source electric field strength during operation of each unit circuit.

An electrophoresis display includes a control substrate having a first face and a second face, a driving circuit layer, a control electrode layer, an electrophoresis layer, and an opposite substrate. The viewing face of the electrophoresis display is on the first face of the control substrate. The aperture ratio of the control substrate in the electrophoresis display, viewed from the first face of the control substrate and toward a display area of the electrophoresis display, is not less than 70%.

A display device includes a first layer disposed on a base layer and including a first gate electrode, a first gate insulating layer, and an active layer, and a second layer disposed on the first layer and including a second gate electrode, a second gate insulating layer, and the active layer. The first layer and the second layer share the active layer. The first gate insulating layer has a first dielectric constant, and the second gate insulating layer has a second dielectric constant. The first dielectric constant and the second dielectric constant are different from each other.

A semiconductor device and an electronic device are provided by the present disclosure. The active layer is provided by the semiconductor device to include a conductor portion, so that a projection of the conductor portion on the substrate is located within a projection of the gate on the substrate. The conductor portion is not controlled by the gate, so the width of the channel portion may be controlled by controlling the width of the gate and the width of the conductor portion, so that the channel length may break through the accuracy limit of the exposure machine, thereby improving the mobility of the thin film transistor.

The disclosure provides an array substrate and a display panel including the same. The array substrate includes a first cushion layer including a first side slope surface and a second side slope surface disposed opposite to each other, a first transistor including a first semiconductor layer, and a second transistor including a second semiconductor layer. A channel of the first semiconductor layer is partially located on the first side slope surface, a plane of a channel of the second semiconductor layer is parallel to a substrate, and an electron mobility of the first semiconductor layer is greater than an electron mobility of the second semiconductor layer.

Provided is a display including a substrate including a display area and a non-display area; a first transistor comprising a first semiconductor layer disposed on the display area of the substrate and a first gate electrode disposed on the first semiconductor layer; and a first gate insulator disposed between the first semiconductor layer and the first gate electrode, wherein the first semiconductor layer includes a first layer and a second layer stacked on one another each other in a direction perpendicular to the substrate, and wherein an indium content of the second layer is higher than an indium content of the first layer, and a height of the first layer is lower than a height of the second layer.

A thin film transistor substrate and a display apparatus including the same are discussed. The thin film transistor in some examples can include a base substrate, a first thin film transistor disposed on the base substrate, and a storage capacitor disposed on the base substrate. The first thin film transistor includes a first active layer disposed on the base substrate and having an oxide semiconductor material, a first gate electrode disposed on the first active layer, and a metal insulating layer overlapping the first active layer and the first gate electrode. The storage capacitor includes a first electrode disposed on the base substrate, a second electrode disposed on the first electrode, and the metal insulating layer disposed between the fist electrode and the second electrode. A resistivity of the metal insulating layer is higher than the resistivity of the active layer.