A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate. A gate electrode of the thin film transistor with the top gate structure is provided in a same layer as a wire layer. A method of manufacturing a display device according to the present disclosure, the display device including a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate, includes: forming a gate electrode of the thin film transistor with the top gate structure in a same layer as a wire layer.

A display device is provided, which includes a substrate structure containing a substrate with a pixel region, and the pixel region includes an aperture region. A metal oxide semiconductor transistor is disposed over the substrate and includes a metal oxide semiconductor layer with a first channel region, a first gate electrode corresponding to the first channel region, and a silicon oxide insulating layer on the metal oxide semiconductor layer. The silicon oxide insulating layer includes an opening corresponding to the aperture region. A polysilicon transistor is disposed over the substrate. The display device also includes an opposite substrate structure, and a display medium between the substrate structure and the opposite substrate structure.

A pixel array includes a plurality of scan lines, a plurality of data lines, a first active device, a second active device, a first pixel electrode and a second pixel electrode. The first active device and the second active device are electrically connected to the corresponding scan line and data line respectively. The first pixel electrode is electrically connected to the first active device through a contact hole. The second pixel electrode is electrically connected to the second active device through the contact hole.

A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.

There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.

There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is , a gate capacitance per unit area is Co, a maximum gate voltage is Vgs.sub.(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is Vth, and a difference in emission brightness of a plurality of EL elements is within a range of n %, a semiconductor display device is characterized in that

[00001]$A=\frac{2.Math.\mathrm{ID}}{*C_0}$$\frac{A}{{\left({\mathrm{Vgs}}_{\left(\max \right)}-\mathrm{Vth}\right)}^2}\frac{W}{L}{\left(\sqrt{1+\frac{n}{100}}-1\right)}^2*\frac{A}{.Math..Math.{\mathrm{Vth}}^2}$$.Math..Math..Math.\mathrm{Vth}.Math.\left(\sqrt{1+\frac{n}{100}}-1\right)*\sqrt{A*L/W}$

Provided are a thin film transistor (TFT) substrate and a method of manufacturing the same. A TFT substrate includes: a substrate defining a pixel area, a first TFT including: an oxide semiconductor layer, a first gate electrode on the oxide semiconductor layer, a first source electrode, and a first drain electrode, a second TFT including: a second gate electrode, a polycrystalline semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a first gate insulating layer under the first gate electrode and the second gate electrode, the first gate insulating layer covering the oxide semiconductor layer, a second gate insulating layer under the polycrystalline semiconductor layer, the second gate insulating layer covering the first gate electrode and the second gate electrode, and an intermediate insulating layer on the first gate electrode and the polycrystalline semiconductor layer, the intermediate insulating layer including a nitride layer.

A display apparatus may include a first transistor, a second transistor, and a capacitor. The first transistor includes a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer. The first semiconductor layer includes a first silicon semiconductor. The second transistor includes a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer. The second semiconductor layer includes a first oxide semiconductor. The capacitor includes a first electrode and a second electrode. The second electrode overlaps the first electrode and extends from the second semiconductor layer.

A display device is disclosed that may include a first active layer disposed on a substrate, a scan line disposed on the first active layer, extending in a first direction and including a first protruding portion protruding in a second direction crossing the first direction, a first compensation control line disposed on the first active layer, extending in the first direction and spaced apart from the scan line in the second direction, and a second active layer disposed on the scan line and the first compensation control line, overlapping the scan line and the first compensation control line and including a second protruding portion protruding in the first direction. The first protruding portion may be positioned outside the second active layer in the first direction in a plan view.

An OLED display device including a display area is provided. A first and second thin film transistors (TFTs) are arranged in the display area, the first TFT includes a first active layer, the second TFT includes a second active layer, a material of the first active layer is different from that of the second active layer. The OLED display device includes a substrate, the second active layer, a second gate of the second TFT, the first active layer, a first gate of the first TFT, a first source and drain of the first TFT, a second source and drain of the second TFT, a first data line in a same layer as the second source and drain, a first planarization layer on the first data line, and a second data line on the first planarization layer and electrically insulated from the first data line.