An optoelectronic device comprises a semiconductor stack, wherein the semiconductor stack comprises a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer; an electrode formed on the second semiconductor layer, wherein the first electrode further comprises a reflective layer; and an insulative layer formed on the second semiconductor layer, and a space formed between the first electrode and the insulative layer.

A light emitting device includes a plurality of light emitting diode stacks and a cooler. The plurality of light emitting diode stacks are each mounted to and cooled by the cooler. A light emitting device includes a plurality of light emitting diode stacks, a cooler, and a power supply. The plurality of light emitting diode stacks are each mounted to and cooled by the cooler, the power supply is configured to power the plurality of light emitting diode stacks, and the power supply is mounted to the cooler on an opposite side of the cooler relative to the plurality of light emitting diode stacks.

In embodiments, methods of configuring a molecular beam epitaxy system include providing a rotation mechanism configured to rotate a substrate deposition plane of a substrate around a center axis of the substrate deposition plane. A positioning mechanism is provided, being configured to allow the substrate deposition plane and an exit aperture of at least one material source in a plurality of material sources to be adjusted in position relative to each other between production runs. The at least one material source has a predetermined material ejection spatial distribution with a symmetry axis that intersects the substrate at a point offset from the center axis. A size of a reaction chamber, that houses the rotation mechanism and the plurality of material sources, is scaled based on the orthogonal distance and the lateral distance in relationship to a radius of the substrate.

A method for producing a semiconductor nanoparticle, a semiconductor nanoparticle, an electroluminescent device including the semiconductor nanoparticle, and a display device. In an embodiment, the method of an embodiment includes preparing a first semiconductor nanocrystal including zinc, tellurium, and selenium, wherein the preparing of the first semiconductor nanocrystal includes heating a first solution including a first zinc precursor, a first selenium precursor and a tellurium precursor in a first organic solvent at a reaction temperature to form a heated solution; and adding an additive to the heated first solution to produce the first semiconductor nanocrystal, wherein the additive includes a second selenium precursor and the additive does not include tellurium, and the semiconductor nanoparticle is configured to emit blue light.

The present invention relates to a method for manufacturing a semiconductor device using a semiconductor growth template, and to a method for manufacturing a semiconductor light-emitting device or a power semiconductor device by using a semiconductor growth template including an ultra-thin type sapphire seed layer.

An optoelectronic device is manufactured by an epitaxial growth, on each first layer of many first layers spaced apart from each other on a first support, wherein the first is made of a first semiconductor material, of a second layer made of a second semiconductor material. A further epitaxial growth is made on each second layer of a stack of semiconductor layers. Each stack includes a third layer made of a third semiconductor material in physical contact with the second layer. Each stack is then separated from the first layer by removing the second layer using an etching that is selective simultaneously over both the first and third semiconductor materials. Each stack is then transferred onto a second support. Each of the first and third semiconductor materials is one of a III-V compound or a II-VI compound.

Provided is a light-emitting quantum dot coated with at least one blue-light absorption layer, including an alloy type core consisting of Cd, Se, Zn, and S, a first shell layer having a zinc blende structure and being coated on the surface of the alloy core, and at least one second shell layer having a wurtzite structure and being coated on a surface of the first shell layer, wherein the element ratio of each of Zn and S accounts for 30 to 50% of the overall core, and the content of Cd and Se gradually decreases outward from the core center. Also provided is a method for preparing the core-shell type light-emitting quantum dot. By having the aforementioned compositions and structures, the core-shell type quantum dot can achieve quantum efficiency of more than 95% and have high-temperature resistance and excellent water- and oxygen-barrier performance.

A light emitting diode (LED) array includes bottom reflectors patterned as an array of closed shapes on a top plane of a base layer for III-N growth. A three-dimensional III-N structure is epitaxially grown around the array of closed shapes and extending above the bottom reflectors. The three-dimensional III-N structures is a contiguous crystalline structure extending across the array. A laterally grown III-N layer is formed in contact with both the reflectors and the three-dimensional III-N structures, and III-N LED layers are grown on the laterally grown layer. One or more top reflectors are grown or deposited on the III-N LED layers and located over the bottom reflectors.

A light-emitting element includes: an anode and a cathode; and a quantum dot layer positioned between the anode and the cathode, the quantum dot layer including a first quantum dot and a second quantum dot. The quantum dot layer includes a crystalline body serving as a core of the first quantum dot, and an inorganic amorphous material formed at at least a part of a surface of the crystalline body.