Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) made primarily of p-type ZnO fine particles is formed. P-side electrodes are formed at a plurality of regions on the p-type layer. A thin insulating layer is formed between an n-type layer and the p-type layer. In the insulating layer, openings are formed at regions A each not overlapping the p-side electrodes and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes apart from the regions A, the length of a current path in the p-type layer can be made substantially larger than the layer thickness.

Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) made primarily of p-type ZnO fine particles is formed. P-side electrodes are formed at a plurality of regions on the p-type layer. A thin insulating layer is formed between an n-type layer and the p-type layer. In the insulating layer, openings are formed at regions A each not overlapping the p-side electrodes and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes apart from the regions A, the length of a current path in the p-type layer can be made substantially larger than the layer thickness.

A light source can include at least one light emitter and is configured to emit a first light during a region of a light period and emit both the first light and a second light of a different wavelength during a remaining region of the light period. The emitter can include semiconductor layers and an active layer configured to emit light having a specific wavelength due to a band gap difference in an energy band depending on a material used to form the active layer. A plant cultivation device can include the light source and a main body in which a plant can be grown. The light period can be configured to increase a content of an active ingredient in the plant. The first light can have a longer peak wavelength than a peak wavelength of the second light.

A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.

A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.

A light source can include at least one light emitter and is configured to emit a first light during a region of a light period and emit both the first light and a second light of a different wavelength during a remaining region of the light period. The emitter can include semiconductor layers and an active layer configured to emit light having a specific wavelength due to a band gap difference in an energy band depending on a material used to form the active layer. A plant cultivation device can include the light source and a main body in which a plant can be grown. The light period can be configured to increase a content of an active ingredient in the plant. The first light can have a longer peak wavelength than a peak wavelength of the second light.

A light emitting device including a first light emitting element and an optical member disposed over the first light emitting element. The optical member includes a light transmissive member and a ceramic component. The light transmissive member has a first upper surface, a second upper surface, and a lower surface opposing to the first upper surface and a second upper surface. The ceramic component is disposed on the second upper surface of the light transmissive member. The light transmissive member and the ceramic component each has a portion that overlaps with the first light emitting element when viewed in plan view.

A light emitting device including a first light emitting element and an optical member disposed over the first light emitting element. The optical member includes a light transmissive member and a ceramic component. The light transmissive member has a first upper surface, a second upper surface, and a lower surface opposing to the first upper surface and a second upper surface. The ceramic component is disposed on the second upper surface of the light transmissive member. The light transmissive member and the ceramic component each has a portion that overlaps with the first light emitting element when viewed in plan view.

A semiconductor nanoparticle includes a cluster consisting of a first semiconductor compound, a core covering at least a portion of the surface of the cluster and including a second semiconductor compound, and a shell covering at least a portion of the surface of the core and including a third semiconductor compound. The first semiconductor compound and the third semiconductor compound each include zinc (Zn), the second semiconductor compound includes Zn, tellurium (Te), and selenium (Se), the first semiconductor compound and the second semiconductor compound are different from each other, and the second semiconductor compound and the third semiconductor compound are different from each other.

A semiconductor nanoparticle includes a cluster consisting of a first semiconductor compound, a core covering at least a portion of the surface of the cluster and including a second semiconductor compound, and a shell covering at least a portion of the surface of the core and including a third semiconductor compound. The first semiconductor compound and the third semiconductor compound each include zinc (Zn), the second semiconductor compound includes Zn, tellurium (Te), and selenium (Se), the first semiconductor compound and the second semiconductor compound are different from each other, and the second semiconductor compound and the third semiconductor compound are different from each other.