A vertical conduction integrated electronic device including: a semiconductor body; a trench that extends through part of the semiconductor body and delimits a portion of the semiconductor body, which forms a first conduction region having a first type of conductivity and a body region having a second type of conductivity, which overlies the first conduction region; a gate region of conductive material, which extends within the trench; an insulation region of dielectric material, which extends within the trench and is arranged between the gate region and the body region; and a second conduction region, which overlies the body region. The second conduction region is formed by a conductor.

A semiconductor device includes a substrate, a first source/drain (S/D) region, a second S/D region, and a semiconductor sheet. The first S/D region is disposed on the substrate. The second S/D region is disposed above the first S/D region. The semiconductor sheet interconnects the first and second S/D regions and includes a plurality of turns. A method for fabricating the semiconductor device is also disclosed.

According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

A semiconductor apparatus including a power semiconductor element connected between a first terminal on a high potential side and a second terminal on a low potential side, and controlled to be ON or OFF according to a gate potential thereof; a switch element connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and controlled to be ON or OFF according to a gate potential thereof; an ON potential supplying section connected between the first terminal and a gate of the switch element, that supplies an ON potential to the gate of the switch element; and an OFF potential supplying section connected between a reference potential and the gate of the switch element, that sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied.

To provide an optimal structure for electrically connecting an MOSFET region, a FWD region, and an IGBT region in parallel within one semiconductor chip by mitigating electric field concentration between a SJ column and a drift region, a semiconductor device is provided, the semiconductor device including: a semiconductor substrate: a super junction MOSFET having a repetitive structure of a first column and a second column; a parallel device having a drift region including second conductivity-type impurities, and being provided separately from the super junction MOSFET in the semiconductor substrate; and a boundary portion located between the super junction MOSFET and the parallel device in the semiconductor substrate, wherein the boundary portion extends from one main surface side to the other main surface side, and has at least one third column having first conductivity-type impurities, and the third column is shallower than the first column and the second column.

An integrated device includes a semiconductor well formed in an epitaxial layer, and a guard ring formed in the epitaxial layer and surrounding the semiconductor well. The semiconductor well and the guard ring include a type of semiconductor different from that of the epitaxial layer. The integrated device also includes an insulating layer formed atop the guard ring, and multiple gate electrodes formed on a top surface of the insulating layer, overlapping the guard ring and surrounding the semiconductor well. The gate electrodes include a first gate electrode and a second gate electrode separated by a gap. An intersecting line between the top surface of the insulating layer and a side wall of the first gate electrode partially overlaps an area that is defined based on an intersecting line between the top surface of the insulating layer and a side wall of the second gate electrode above the guard ring.

A transistor in an integrated circuit device is formed using fabrication processes that include techniques to create a strain in the channel material, thereby improving the performance of the transistor. In one or more embodiments, an initial transistor structure is formed including a substrate, a dummy fin, and a hard mask. The dummy fin structure is narrowed. A channel is epitaxially grown on the dummy fin structure to create a strain on the channel. A first gate stack is formed over the channel. The hard mask and dummy fin are removed. A second gate stack is formed over the channel. Excess material is removed from the second gate stack. The formation of the transistor is finalized using a variety of techniques.

Embodiments are directed to a method of forming a semiconductor device and resulting structures having self-aligned spacer protection layers. The method includes forming a first sacrificial gate adjacent to a second sacrificial gate on a substrate. A dielectric layer is formed on the substrate and above top surfaces of the first and second sacrificial gates. A self-aligned protection region is formed to cover a first portion of the dielectric layer and a second uncovered portion of the dielectric layer is removed. The first portion of the dielectric layer defines a spacer after the second portion of the dielectric layer is removed.

An SGT production method includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask formed from a third insulating film; a third step of forming a second hard mask on a side wall of the first hard mask, and forming a second dummy gate; a fourth step of forming a sidewall and forming a second diffusion layer; a fifth step of depositing an interlayer insulating film, exposing upper portions of the second dummy gate and the first dummy gate, removing the second dummy gate and the first dummy gate, forming a first gate insulating film, and forming a gate electrode and a gate line; and a sixth step of forming a first contact and a second contact.

An SGT production method includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask formed from a third insulating film; a third step of forming a second hard mask on a side wall of the first hard mask, and forming a second dummy gate; a fourth step of forming a sidewall and forming a second diffusion layer; a fifth step of depositing an interlayer insulating film, exposing upper portions of the second dummy gate and the first dummy gate, removing the second dummy gate and the first dummy gate, forming a first gate insulating film, and forming a gate electrode and a gate line; and a sixth step of forming a first contact and a second contact.