Implementations relating to a back contact solar cell and its preparation method are provided in this disclosure. In an implementation, a back contact solar cell includes a silicon substrate having a first surface. The first surface comprises a first conductive region, a second conductive region, and an insulation region located between the first conductive region and the second conductive region. The back contact solar cell further comprises a first transport layer located on the first conductive region and a second transport layer located on the second conductive region. The second transport layer extends from the second conductive region through the insulation region to the first conductive region, and partially covers the first transport layer, wherein a thickness of a first portion of the second transport layer located on the insulation region is greater than a thickness of a second portion of the second transport layer located on the second conductive region.

A source wafer for use in a micro-transfer printing process. The source wafer comprises: a substrate; a device coupon (110), including an optoelectronic device; and a breakable tether securing the device coupon to the substrate. The breakable tether includes one or more breaking regions which connect the breakable tether to the substrate.

A source wafer for use in a micro-transfer printing process. The source wafer comprises: a substrate; a device coupon (110), including an optoelectronic device; and a breakable tether securing the device coupon to the substrate. The breakable tether includes one or more breaking regions which connect the breakable tether to the substrate.

An image sensor device includes nanostructures for improving light absorption efficiency. The image sensor device includes a substrate, a light absorption region, and a nanostructure array. The light absorption region is over the substrate. The nanostructure array us over the light absorption region. The nanostructure array includes a plurality of nanostructures repeatedly arranged from a top view.

This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell. The carbon and the oxygen in the silicon oxycarbide layer have a fixed effect on the hydrogen, which is beneficial for reducing the loss of hydrogen.

The present disclosure provides back-contact solar cells, and methods for manufacturing back-contact solar cells. In one aspect, a back-contact cell comprising a silicon substrate, a first doped semiconductor layer on a back surface of the silicon substrate in first regions, and a second doped semiconductor layer on the back surface of the silicon substrate in second regions. The first regions and the second regions are alternately distributed at intervals. The back surface of the silicon substrate comprises an isolation region between a first region and a second region adjacent to the first region. A surface of the isolation region is recessed into the silicon substrate. A depth by which the surface of the isolation region is recessed into the silicon substrate relative to the surface of the at least one of the first regions is less than 3000 nm.

An electronic device is provided. The electronic device includes a cover including a transparent portion, an optical sensor that is spaced from the cover and includes a light-emitting portion configured to transmit first light portions to the outside through the transparent portion of the cover and at least one light-receiving portion spaced from the light-emitting portion, configured to receive second light portions through the transparent portion, and surrounding the outside of the light-emitting portion, a first optical coating disposed on one surface of the transparent portion and facing the light-emission portion, and a second optical coating spaced from the first optical coating, disposed on one surface of the transparent portion, and facing the at least one light-receiving portion. The first optical coating includes patterns that are concentric around a location overlapping the light-emitting portion.

An image sensor device is disclosed which includes a semiconductor layer having a first surface and a second surface, where the second surface is opposite to the first surface. The device includes a conductive structure disposed over the first surface, with a dielectric layer disposed between the conductive structure and the first surface. The device includes a first dielectric layer disposed over the second surface of the semiconductor substrate. The device includes a second dielectric layer disposed over the first dielectric layer. The device includes a color filter layer disposed over the second dielectric layer. In some embodiments, the thickness, refractive index, or both of the first dielectric layer and the thickness, refractive index, or both of the second dielectric layer may be collectively determined to cause incident radiation passing through the first dielectric layer and the second dielectric layer and to the plurality of pixels to have destructive interference.

Methods and systems for creating nanostructures to reduce optical losses are provided. An example described herein provides a solar cell. The solar cell includes an antireflective coating including sloped nanostructures formed in a vapor deposition process.

The present application relates a solar cell, a photovoltaic device and a photovoltaic system. The solar cell includes a substrate, a first passivation layer, and a second passivation layer. The substrate includes a first surface and a second surface opposite to each other along a thickness direction of the substrate. The first passivation layer is disposed on the first surface of the substrate. The second passivation layer is disposed on a side of the first passivation layer away from the substrate. A material of the first passivation layer is the same as that of the second passivation layer. An atomic packing density of the first passivation layer is higher than that of the second passivation layer. An average thickness of the first passivation layer is smaller than that of the second passivation layer.