Methods of fabricating conductive contacts for polycrystalline silicon features of solar cells, and the resulting solar cells, are described. In an example, a method of fabricating a solar cell includes providing a substrate having a polycrystalline silicon feature. The method also includes forming a conductive paste directly on the polycrystalline silicon feature. The method also includes firing the conductive paste at a temperature above approximately 700 degrees Celsius to form a conductive contact for the polycrystalline silicon feature. The method also includes, subsequent to firing the conductive paste, forming an anti-reflective coating (ARC) layer on the polycrystalline silicon feature and the conductive contact. The method also includes forming a conductive structure in an opening through the ARC layer and electrically contacting the conductive contact.

A PV module configured for vertical mounting, in which at least one cover glass has an external textured surface. The pattern of such texture is a plurality of triangular prisms. The height of the prisms is directed either parallelly or perpendicularly, or obliquely relative to the PV module's long side. The apparatus utilizes the sunlight at around noontime, mostly reflected from the glass at the grazing angles by redirecting the sunlight towards the PV cells inside the PV module. The sunlight harvesting is significantly higher than for PV modules with a smooth external surface. A polymer coating on the glass may also provide the texture pattern.

Disclosed are a solar cell and a photovoltaic module. The solar cell includes a substrate, having a first surface, having a metal pattern region and a non-metal pattern region, a first passivation contact structure, located in the metal pattern region and including a first tunneling layer and a first doped conductive layer stacked in a direction away from the substrate, and a second passivation contact structure, including a second tunneling layer and a second doped conductive layer stacked in the direction away from the substrate, and having a first portion over the non-metal pattern region and a second portion over the first passivation contact structure, and a top surface of the first portion of the second passivation contact structure is not further away from the substrate than a top surface of the second portion of the second passivation contact structure.

Solar cells having thermally conductive multilayered structures are disclosed. A disclosed thermally conductive structure for use with a solar panel includes an at least partially transparent coverslide including at least one of amorphous glass material, a crystalline material or a crystal material.

A semiconductor optical device includes a substrate a spot-size converter, an optical detector, a core layer and a first III-V compound semiconductor layer, the core layer is disposed between the substrate and the first III-V compound semiconductor layer, the optical detector includes a light absorbing layer, a second III-V compound semiconductor layer, and an insulating film, the light absorbing layer is disposed between the substrate and the second III-V compound semiconductor layer, the second III-V compound semiconductor layer is disposed between the light absorbing layer and the insulating film, the light absorbing layer is optically coupled to the core layer, the spot-size converter has a first end face connected to the optical detector and a second end face opposite to the first end face, and the first III-V compound semiconductor layer is connected to the second III-V compound semiconductor layer and the insulating film at the first end face.

The present disclosure provides a solar cell front passivation film layer. The solar cell front passivation film layer includes a silicon substrate, on a surface of which are sequentially laminated a first silicon nitride layer, a second silicon nitride layer and a silicon oxynitride layer, where refractive indexes of the first silicon nitride layer, the second silicon nitride layer and the silicon oxynitride layer are gradually reduced; and the silicon oxynitride layer has a thickness of 40 nm to 60 nm. The solar cell front passivation film layer according to the present disclosure, under the condition of the relatively thick silicon oxynitride film layer, can not only guarantee an excellent passivation effect, but also reduce the reflectivity of the solar cell front passivation film layer, thereby reducing the optical reflectivities of the cell and the assembly.

The present disclosure provides a solar cell front passivation film layer. The solar cell front passivation film layer includes a silicon substrate, on a surface of which are sequentially laminated a first silicon nitride layer, a second silicon nitride layer and a silicon oxynitride layer, where refractive indexes of the first silicon nitride layer, the second silicon nitride layer and the silicon oxynitride layer are gradually reduced; and the silicon oxynitride layer has a thickness of 40 nm to 60 nm. The solar cell front passivation film layer according to the present disclosure, under the condition of the relatively thick silicon oxynitride film layer, can not only guarantee an excellent passivation effect, but also reduce the reflectivity of the solar cell front passivation film layer, thereby reducing the optical reflectivities of the cell and the assembly.

In order to regulate the characteristics of each of a plurality of individualized semiconductor elements, the present technique provides a semiconductor device including a first semiconductor element and a plurality of second semiconductor elements with a circuit configured to process a signal from the first semiconductor element, wherein the first semiconductor element and each of the plurality of second semiconductor elements are stacked and arranged; and a first film formed on at least one of the plurality of second semiconductor elements is different in configuration from a second film formed on another of the second semiconductor elements.

The purpose of the present invention is to provide a method for manufacturing a solar cell module, comprising the steps of: placing a mixture solution comprising a polysiloxane and a curing agent in a humidified condition and sealing same; forming a polysiloxane film by curing the mixture solution; and manufacturing a porous polysiloxane film by evaporating water drops formed on the surface of the polysiloxane film. By applying the porous polysiloxane film manufactured by the present invention to a solar cell module, weight reduction and efficiency improvement effects of the solar cell module can be obtained.

The present disclosure provides an integrated circuit (IC) structure with a solar cell and an image sensor array. An integrated structure according to the present disclosure includes a first substrate including a plurality of photodiodes, an interconnect structure disposed on the first substrate, a first bonding layer disposed on the interconnect structure, a second bonding layer disposed on the first bonding layer, a second substrate disposed on the second bonding layer, and a transparent conductive oxide layer disposed on the second substrate.