Patent classifications
H10F77/30
BACK CONTACT SOLAR CELL AND PHOTOVOLTAIC MODULE
The present disclosure discloses a solar cell and a photovoltaic module. In one example, a solar cell includes a silicon substrate; a first doped crystalline silicon region and a second doped crystalline silicon region that are arranged on a back surface of the silicon substrate; and an isolation groove, configured to isolate the first doped crystalline silicon region and the second doped crystalline silicon region. A textured structure with pyramidal structures is arranged at a bottom of the isolation groove, a distribution density of apexes of the pyramidal structures ranging from 25/100 m.sup.2 to 80/100 m.sup.2. The back surface of the silicon substrate includes an overlapping region where the first doped crystalline silicon region and the second doped crystalline silicon region overlaps, the overlapping region being a polished surface.
SOLAR CELL, METHOD FOR MANUFACTURING THE SAME, PHOTOVOLTAIC MODULE AND PHOTOVOLTAIC SYSTEM
The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (110), including a first surface (S1) and a second surface (S2) being opposite to each other, wherein the first surface (S1) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (120), located in the first region (A) of the first surface (S1); a polysilicon layer (130) located on at least a part of a surface of the passivating contact layer (120) away from the substrate (110); the passivating contact layer (120) including a first tunneling layer (121) and a first doped layer (122), the first tunneling layer (121) and the first doped layer (122) being sequentially stacked on the first region (A) of the first surface (S1) of the substrate (110) in a direction away from the second surface (S2); and a first passivation layer (140), located on a surface of the polysilicon layer (130) away from the passivating contact layer (120) and on the second region (B) of the first surface (S1).
PANEL AND METHOD FOR PREPARING SAME, AND PHOTOVOLTAIC MODULE
Provided are a panel and a method for preparing the same, and a photovoltaic module. The panel includes a visual board and a coating. The visual board includes a plurality of coated regions arranged in an array and non-coated regions defined by the plurality of coated regions. The coating is applied on cach of the plurality of coated regions.
Bifacial photovoltaic cell manufacturing process
A process for manufacturing a bifacial photovoltaic cell, comprising the steps: coating a substrate with a boron containing layer; forming a cap layer over the boron containing layer which is on the second surface of the substrate; removing the boron containing layer from the surfaces of the substrate which are not covered with a cap layer; effecting the deposition of a phosphorous containing layer on the surfaces of the substrate which are not covered by the cap layer, and effecting diffusion of the phosphorous and the boron into the substrate; removing the phosphorous containing layer; texturing the substrate where there is no cap layer; effecting the deposition of a phosphorous containing layer on the first surface of the substrate and effecting diffusion of phosphorous into the substrate to form a second n-doped layer; and forming a passivating and/or antireflective coating layer covering the n-doped layer on the substrate's first surface.
Electromagnetic radiation transmissive polymer substrates
This document describes electromagnetic radiation (EMR) transmissive polymer substrates and techniques for producing EMR transmissive polymer substrates by pre-treating polymer substrates with at least one lipid. In aspects, the EMR transmissive polymer substrates are infrared (IR) transmissive polymer substrates and the techniques described are for producing IR transmissive polymer substrates. In general, disclosed techniques include applying a coating of at least one lipid to at least one surface of a polymer substrate and then performing a heat-treatment process on the coated polymer substrate. The techniques may also include performing a cooling process on the polymer substrate after the heat-treatment process.
Electromagnetic radiation transmissive polymer substrates
This document describes electromagnetic radiation (EMR) transmissive polymer substrates and techniques for producing EMR transmissive polymer substrates by pre-treating polymer substrates with at least one lipid. In aspects, the EMR transmissive polymer substrates are infrared (IR) transmissive polymer substrates and the techniques described are for producing IR transmissive polymer substrates. In general, disclosed techniques include applying a coating of at least one lipid to at least one surface of a polymer substrate and then performing a heat-treatment process on the coated polymer substrate. The techniques may also include performing a cooling process on the polymer substrate after the heat-treatment process.
Optical filter and corresponding manufacturing method
An optical filter includes a carrier layer made of a first material. A periodic grating of posts is disposed on the carrier layer in a periodic pattern configured by characteristic dimensions. The posts are made of a second material. A layer made of a third material encompasses the periodic grating of posts and covers the carrier layer. The third material has a refractive index that is different from a refractive index of the second material. Characteristic dimensions of the periodic grating of posts are smaller than an interfering wavelength and are configured to selectively reflect light at the interfering wavelength on the periodic grating of posts.
Photovoltaic device with passivated contact and corresponding method of manufacture
Disclosed is a photovoltaic device including: a silicon substrate; a first tunnel layer situated upon at least a first side of the silicon substrate; a first polycrystalline silicon-based capping layer situated upon the first tunnel layer; and a second tunnel layer situated upon substantially the entirety of the first polycrystalline silicon-based capping layer. The photovoltaic device further includes: a second polycrystalline silicon-based capping layer situated upon predetermined zones of the second tunnel layer, areas of the second tunnel layer situated outside of the predetermined zones being free of the second polycrystalline silicon-based capping layer; and a metal contact situated upon at least part of the second polycrystalline silicon-based capping layer.
Solar cell and method for preparing the same
The present disclosure provides a solar cell including a substrate, a first emitter, a second emitter, an insulating spacing structure, a first electrode, and a second electrode. The substrate includes a front surface and a back surface opposite to each other. The first emitter and the second emitter are disposed on the back surface of the substrate. The first electrode is disposed on a side of the first emitter away from the substrate, and the first electrode is electrically connected to the first emitter. The second electrode is disposed on a side of the second emitter away from the substrate, and the second electrode is electrically connected to the second emitter. The insulating spacing structure is disposed between the first emitter and the second emitter, and the first emitter and the second emitter are spaced from each other by the insulating spacing structure.
Composite etch stop layers for sensor devices
A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of SiH bonds in the silicon nitride layer is greater than a percentage of SiH bonds in the stressed layer.