A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of SiH bonds in the silicon nitride layer is greater than a percentage of SiH bonds in the stressed layer.

A solar cell, including: a semiconductor substrate including front and rear surfaces opposite to each other, P-type and N-type conductive regions are arranged in an alternating manner on the rear surface, and gap regions are formed between adjacent P-type and N-type conductive regions, a first notch region is formed by recessing between the P-type conductive region and the gap region, first texture structure is formed within the first notch region, the first direction is parallel to a direction from the gap region to the P-type conductive region, second texture structure is formed within the gap region, and a shape of the second texture structure is different from the first texture structure; a first passivation layer formed over the front surface; and a second passivation layer formed over the rear surface, the second passivation layer covers the first notch regions, the gap regions and the P-type and N-type conductive regions.

A semiconductor apparatus includes a first substrate that includes a first wiring structure and a first semiconductor layer, and a second substrate that includes a second wiring structure and a second semiconductor layer, wherein a first metal pattern and a second metal pattern are bonded to electrically connect the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer is larger than the first semiconductor layer in a plan view seen from a side with the first semiconductor layer, wherein the second wiring structure includes a guard structure that has a third metal pattern and is disposed at a same height as the second metal pattern, and wherein, in the plan view, a contact portion between the third metal pattern and a diffusion preventing film in contact with the third metal pattern is disposed at a position outside the first semiconductor layer.

A solar cell includes a substrate, a first doped conductive layer, a local doping region, and a first electrode. The first layer is formed at one side of the substrate. The local doping region is formed at one side of the first layer away from the substrate, and the local doping region is doped with a same doping element as that in the first layer and first element. The first electrode is provided at one side of the local doping region away from the first layer and electrically connected to the local doping region. This structure can reduce the surface barrier, thereby reducing the contact resistivity between the first electrode and the local doping region, so that the first electrode forms better ohmic contact with the local doping region, which is conducive to the transport of carriers, improving the filling factor, and improving the efficiency.

Embodiments of the present disclosure relate to the field of photovoltaics, and provide a solar cell, a tandem solar cell, and a photovoltaic module. The solar cell is formed by a segmented solar cell having a segmentation surface formed in a segmenting process, and includes a passivation stack at least formed on the segmentation surface. The passivation stack includes at least a first passivation layer and a second passivation layer formed over the first passivation layer in a first direction away from the segmentation surface, and the first passivation layer includes a silicon oxide material, the second passivation layer includes a metal oxide material, a metal element in the metal oxide material includes at least one element of aluminum, titanium, zinc, zirconium, hafnium, molybdenum, tungsten, or nickel.

This application provides a solar cell, a preparation method therefor, and a photovoltaic module. In one aspect, a solar cell includes a silicon substrate, and a low-absorption coefficient layer arranged on a light-receiving surface of the silicon substrate. The low-absorption coefficient layer and the light-receiving surface of the silicon substrate have a same conductivity type. An absorption coefficient of the low-absorption coefficient layer is less than an absorption coefficient of the silicon substrate in a wavelength band of less than or equal to 400 nm. A thickness of the low-absorption coefficient layer ranges from 15 to 200 nm. The low-absorption coefficient layer is in contact with the silicon substrate.

A system and method are provided for forming energy filter layers or shutter components, including energy scattering layers that are actively electrically switchable. The energy filters or shutter components are operable between at least a first mode in which the layers, and thus the presentation of the shutter components, appear substantially transparent when viewed from an energy/light incident side, and a second mode in which the layers, and thus the presentation of the energy filters or shutter components, appear opaque to the incident energy impinging on the energy incident side. The differing modes are selectable by electrically energizing, differentially energizing and/or de-energizing electric fields in a vicinity of the energy scattering layers. Refractive indices of transparent particles, and the transparent matrices in which the particles are fixed, are tunable according to the applied electric fields. The energy scattering layers may conceal a sensor such as a camera or photovoltaic cell.

A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Some embodiments of the present disclosure provide an N-type TOPCon cell with double-sided aluminum paste electrodes, and a preparation method therefor. The front side of the cell is provided with a front-side silver main grid and a front-side aluminum fine grid, and the back side is provided with a back-side silver main grid and a back-side aluminum fine grid. The method for preparing the cell includes: texturing.fwdarw.B diffusion.fwdarw.BSG removal.fwdarw.alkali polishing.fwdarw.depositing a tunnel oxide layer and a polysilicon layer on a back side of a substrate by means of LPCVD.fwdarw.P diffusion on the back side.fwdarw.PSG removal.fwdarw.plating removal.fwdarw.deposition of an AlO.sub.x preparatory layer and a first SiN.sub.xH.sub.y preparatory layer on the front side.fwdarw.deposition of a second preparatory layer SiN.sub.xH.sub.y on the back side.fwdarw.UV laser ablation on the front side of the substrate and the back side of the substrate.fwdarw.screen printing.

A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.