H10F77/30

PROCESSES FOR UNIFORM METAL SEMICONDUCTOR ALLOY FORMATION FOR FRONT SIDE CONTACT METALLIZATION AND PHOTOVOLTAIC DEVICE FORMED THEREFROM

A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one lying on top of the other, wherein an upper exposed surface of the semiconductor substrate represents a front side surface of the semiconductor substrate. A plurality of patterned antireflective coatings is located on the front side surface to provide a grid pattern including a busbar region and finger regions. The busbar region includes at least a real line interposed between at least two dummy lines. A material stack including at least one metal layer located on the semiconductor substrate in the busbar region and the finger regions.

High-frequency optoelectronic detector, system and method
09698295 · 2017-07-04 · ·

An optoelectronic device for detecting electromagnetic radiation includes a body of semiconductor material. A first region and a second region that form a junction are provided within the body. A recess extends into the body and is delimited by side arranged transverse to a main surface of the body. The junction is exposed by the sidewall to coupled electromagnetic radiation received in the recess into a photodiode formed by the junction.

Multi-sensor pixel architecture for use in a digital imaging system
09698193 · 2017-07-04 · ·

A system and method for a multi-sensor pixel architecture for use in a digital imaging system is described. The system includes at least one semiconducting layer for absorbing radiation incident on opposites of the at least one semiconducting layer along with a set of electrodes on one side of the semiconducting layer for transmitting a signal associated with the radiation absorbed by the semiconducting layer.

Single photon generation through mechanical deformation

The present disclosure generally relates to single photon emission from an indirect band gap two-dimensional (2D) material through deterministic strain induced localization. At least some aspects of the present disclosure relate to techniques for deterministically creating spatially localized defect single photon emission sites in the 750 nm to 800 nm regime using a tungsten diselenide (WSe.sub.2) film and ultra-sharp SiO.sub.2 tips.

Solar cell and manufacturing method thereof

The present invention discloses a manufacturing method of a solar cell, including: forming an electricity generation layer on a substrate; forming an ohmic contact layer on a surface of the electricity generation layer facing away from the substrate; forming a back electrode on a surface of the substrate facing away from the electricity generation layer; and forming a top electrode on a surface of the ohmic contact layer facing away from the electricity generation layer using a printing process. The present invention discloses a solar cell. The present invention solves the problem of low capacity of the solar cell at present.

Solar cell and production method thereof, photovoltaic module

Embodiments of the present disclosure relates to the field of solar cells, and in particular to a solar cell and a production method thereof, and a photovoltaic module. The solar cell includes: a P-type emitter formed on a first surface of an N-type substrate and including a first portion and a second portion, a top surface of the first portion includes first pyramid structures, and a top surface of the second portion includes second pyramid structures whose edges are straight. A transition surface is respectively formed on at least one edge of each first pyramid structure, and each of top surfaces of at least a part of the first pyramid structures includes a spherical or spherical-like substructure. A tunnel layer and a doped conductive layer sequentially formed over a second surface of the N-type substrate. The present disclosure can improve the photoelectric conversion performance of solar cells.

Contacts for solar cells

A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Back-side metal electrode of N-type TOPCon solar cell, and method for preparing back-side metal electrode of N-type TOPCon solar cell, and N-type TOPCon solar cell

Some embodiments of the present invention relate to a technical field of N-type TOPCon solar cells, and disclose a back-side metal electrode of an N-type TOPCon solar cell. The back-side metal electrode includes a substrate, a plurality of first silver fine grids disposed on a passivation film which is on a back side of the substrate, a plurality of second aluminum fine grids overlaid on the plurality of first silver fine grids, and a plurality of first silver main grids disposed perpendicular to the plurality of first silver fine grids. Each of the plurality of first silver main grids is a segmented structure. The back-side metal electrode further includes a plurality of second aluminum main grids, which are formed, in a printing manner, between any two adjacent grid segments of a plurality of grid segments and around each of the plurality of grid segments.

Solar cell and photovoltaic module

Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

MONOLAYER DEPOSITION OF NANOPARTICLES

Methods of forming a monolayer of nanoparticles are described. The method may include forming an activated surface on a substrate. Methods may also include contacting the activated surface with a fluid including nanoparticles. Methods may further include forming a plurality of monolayers in the liquid on the activated surface. The plurality of nanoparticles may include a first monolayer of nanoparticles bonded to the activated surface. The plurality of nanoparticles may include a second monolayer of nanoparticles bonded to the first monolayer of nanoparticles. The bond strengths between a nanoparticle and the underlying substrate, between adjacent nanoparticles, and between nanoparticles of adjacent monolayers may be related by a specific relationship. The method may also include removing monolayers of the plurality of monolayers while retaining the first monolayer to form the substrate with the first monolayer. Systems for performing the methods and substrates resulting from the methods are also described.