A solar cell, a manufacturing method thereof, and a photovoltaic module are provided. The solar cell includes a substrate having electrode regions and non-electrode regions that are alternatingly arranged in a first direction, where the non-electrode regions of the substrate include a plurality of first regions and a plurality of second regions; a doped conductive layer formed over the dielectric layer; a passivation layer formed over the first regions and the doped conductive layer; and a plurality of electrodes.

A battery back passivation structure, a manufacturing method therefor, and a solar cell, the manufacturing method comprising: introducing a dopant gas and a first reaction gas into a coating device, and depositing a doped passivation layer on the back side of a silicon wafer (1); and introducing a second reaction gas into the coating device, and directly or indirectly depositing an internal reflection layer on the surface of the doped passivation layer away from the silicon wafer (1). The described battery back passivation structure comprises a doped passivation layer and an internal reflection layer that are stacked on the back side of the silicon wafer (1), and has enhanced passivation capability.

An integrated photodetecting semiconductor optoelectronic component for measuring the intensity of each of the two colour constituents of dichromatic light irradiating the optoelectronic component includes a first SPAD and a second SPAD that detect photons over a broad range of wavelengths. The component also includes a semiconductor optical longpass filter that at least partially covers an active surface area of the first SPAD. The longpass filter is permissive to a first one of the two colour constituents of the dichromatic light and blocking the second one of the two colour constituents of the dichromatic light. The component further includes electronic circuitry for the readout and processing of detection signals delivered by the first and second SPAD. The electronic circuitry is adapted to provide a first intensity output signal and a second intensity output signal via a differential analysis based on the detection signals delivered by the first and second SPAD.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

A photoresistor comprises a silicon-on-insulator substrate (101) comprising a device layer (4). In an example embodiment and mode at least two non-contiguous first highly conductive regions (2, 3) of semiconductor material are formed on a surface of the device layer, and at least one active region (1) of a high resistivity semiconductor material of a same conductivity type as the first highly conductive regions are formed to propagate through a whole thickness of the device layer and to electrically contact the at least two non-contiguous first highly conductive regions.

Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

A modified tunnel oxide layer and a preparation method, a TOPCon structure and a preparation method, and a solar cell are provided. The modified tunnel oxide layer is SiO.sub.x subjected to plasma surface treatment, and a Si.sup.4+ content in the SiO.sub.x is greater than or equal to above 18%. The density of the interface state subjected to plasma surface treatment decreases, and compared with the silicon oxide layer prepared in the prior arts, boron has a low diffusion rate in the modified silicon oxide layer and hence the damaging effect of the boron on the tunnel oxide layer is reduced effectively, thereby improving the integrity of the silicon oxide layer and maintaining chemical passivation effect. The modified tunnel oxide layer significantly increases the performance indexes of the TOPCon structure.

This application provides a solar cell, a production method therefor, and a photovoltaic assembly. In one aspect, a solar cell includes a silicon substrate and a majority carrier tunneling field effect layer and a front selective contact layer stacked in sequence on a light receiving side of the silicon substrate. The front selective contact layer and the silicon substrate are of a same doping type. The majority carrier tunneling field effect layer includes a dielectric material with a dielectric constant greater than or equal to 8. A density of fixed charges in the majority carrier tunneling field effect layer is greater than or equal to a preset density. A type of the fixed charges in the majority carrier tunneling field effect layer is the same as a charge type of minority carriers in the silicon substrate.

Disclosed is a color solar cell module including a transparent substrate, a plurality of solar cells disposed on one side of the transparent substrate and each having a light receiving part, and a color layer disposed on a surface of each of the plurality of solar cells on an opposite side surface of the light receiving part.