An optical chip and an optical module. The optical chip includes: an optical device; an optical power detector, connected to the optical device; a waveguide, used for transmitting light emitted from the optical device; and a detection material, formed inside the waveguide and/or on a surface of the waveguide. The detection material absorbs light transmitted by the waveguide and generates a preset effect, and the preset effect changes a preset parameter value of the detection material. The optical chip can simply and effectively integrate the optical power detector.

Disclosed in the present invention is a short-range optical potentiometer module, comprising a potential base body provided with a key slot, and a potential key which is mounted inside the key slot and can be displaced up and down, wherein a reset member for resetting the potential key is also arranged inside the key slot, an optical pair transistor composed of a photosensitive element and a light-emitting element is arranged inside the potential key, the optical pair transistor can be displaced up and down along with the potential key, a key base is internally provided with a fixed grating corresponding to the optical pair transistor, the reset member is sleeved on the grating, and the grating is configured such that the flux of light received by the photosensitive element from the light-emitting element changes along with the up-and-down displacement of the potential key, thereby causing an electrical signal generated by the photosensitive element to change along with the displacement of the potential key. The module of the solution uses non-contact photoelectric elements, thereby greatly increasing the service life; when the change in flux of light at the same distance is adjusted, the overall height of the module is close to or the same as the height of a potential base body; and the module has a skillful overall structure layout, can be conveniently assembled and replaced, and has strong practicality.

The disclosed semiconductor device includes a region provided with a plurality of circuit blocks each including an avalanche photodiode. A part of the plurality of circuit blocks is a pixel circuit further including a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to the first control signal, and another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal corresponding to a waveform of the first control signal. The signal generation circuit is configured not to output a signal corresponding to the output of the avalanche photodiode.

A power device sensor includes a semiconductor thermo-optic element, circuitry including a light-emitting diode that emits photons and a photodetector that detects the photons and alters a voltage output by the circuitry, and an optical waveguide in optical communication with the light-emitting diode, the semiconductor thermo-optic element, and the photodetector.

An optical coupling device includes a leadframe, a light-emitter, a light-receiver, and first to fourth resins. The light-emitter is located on the leadframe. The first resin is located on the leadframe. The first resin includes first and second portions. The first portion surrounds the light-emitter. The second portion is positioned between the first portion and the light-emitter. A first thickness of the first portion is greater than a second thickness of the second portion. The second resin is located between the light-emitter and the light-receiver in the first direction and is light-transmissive. The third resin is located between the second resin and the light-receiver and is light-transmissive. The fourth resin houses the light-emitter, the light-receiver, and the first to third resins and is light-shielding.