A heterojunction solar cell and a manufacturing method thereof are provided. The manufacturing method includes the following steps: A: forming a tunnel oxide layer on a surface of a semiconductor substrate; B: forming an N-type polysilicon layer on the tunnel oxide layer; C: forming a mask layer on the N-type polysilicon layer of a first main surface of the semiconductor substrate; D: performing texturing and cleaning on a second main surface of the semiconductor substrate, and removing the mask layer; E: forming a second intrinsic amorphous silicon layer on the second main surface of the semiconductor substrate; and F: forming a P-type oxygen-doped microcrystalline silicon layer on the second intrinsic amorphous silicon layer.

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

The present application discloses a solar cell, a solar cell module, and a method for manufacturing a solar cell. In one example, a solar cell includes a semiconductor substrate, an ultra-thin dielectric layer, a passivation layer, a first electrode, and metallic crystals. The semiconductor substrate has a light receiving surface and a back surface opposite to the light receiving surface. The ultra-thin dielectric layer is formed on at least one of the back surface and the light receiving surface of the semiconductor substrate. The passivation layer is formed on the ultra-thin dielectric layer. The first electrode is formed on the passivation layer. The metallic crystals are formed in the passivation layer. The metallic crystals include a first metallic crystal, where an end surface of the first metallic crystal abuts against the ultra-thin dielectric layer, and another end surface of the first metallic crystal is connected to the first electrode.

According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 410.sup.15 cm.sup.3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.

A solar cell, a method for manufacturing solar cell, and a photovoltaic module. The solar cell includes: a semiconductor substrate; a tunneling layer located over a rear surface of the semiconductor substrate; a hydrogen barrier layer located over a surface of the tunneling layer; a lightly doped conductive layer located over a surface of the hydrogen barrier layer; and grid-shaped doped conductive layers located on at least part of a surface of the lightly doped conductive layer, wherein each of the grid-shaped doped conductive layers includes a heavily doped conductive layer and a metal barrier layer that are stacked on one another.

A solar cell includes a substrate having a front surface and a back surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface of the substrate and in a direction away from the substrate; where the first passivation layer includes a dielectric material; the second passivation layer includes a first Si.sub.uN.sub.v material, and a value of v/u is 1.3v/u1.7; and the third passivation layer includes a Si.sub.rO.sub.s material, and a value of s/r is 1.9s/r3.2; and a tunneling oxide layer and a doped conductive layer sequentially formed on the back surface of the substrate and in a direction away from the back surface; the doped conductive layer and the substrate are doped to have a same conductivity type.

A laminated dopant source structure, a relevant high-quality emitter and a preparation method thereof are provided. The laminated dopant source structure includes a nano silicon oxide layer, a doped silicon oxide layer and a dopant source layer laminated on a front surface of a crystalline silicon substrate; the doped silicon oxide layer is doped with boron or phosphorus atoms; the material of the dopant source layer is selected from one of boron/phosphorus-doped amorphous silicon, carbon-doped boron/phosphorus-doped amorphous silicon, nitrogen-doped boron/phosphorus-doped amorphous silicon and carbon-nitrogen-doped boron/phosphorus-doped amorphous silicon. The nano silicon oxide, the doped silicon oxide and the boron/phosphorus-doped amorphous silicon form the front surface dopant source. The dopant source structure combines strong laser absorption ability and high boron/phosphorus concentration, which helps reduce the laser power and irradiation time required for laser SE technology. Further, without loss of sheet resistance and junction depth, the surface recombination can be diminished.

The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which, in a treatment step, a treatment current flow having a current density of 200 A/cm.sup.2 to 20,000 A/cm.sup.2 in relation to the treatment section is induced while biasing and illuminating the silicon solar cell. The object of the invention is to improve the method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. In particular, it should be possible to quantify the improvement achieved by the method while implementing the method. Furthermore, any damage resulting from the application of unfavourable process parameters should be detected while the method is being implemented. This object is achieved in that a measurement step is carried out before and/or after the treatment step, and, in said measurement step, a measurement current flow having a current density of 1 mA/cm.sup.2 to 500 mA/cm.sup.2 is induced by illuminating the sun-facing side of the silicon solar cells and biasing, and a current strength of said measurement current flow is sensed using an ammeter and stored assigned to the respective measurement section.

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a first dopant having a first doping type. A deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the first doped region. A second doped region is disposed within the semiconductor substrate and abuts the first doped region. The second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type. An isolation structure is disposed within the semiconductor substrate. The isolation structure extends from the back-side surface of the semiconductor substrate to a point below the back-side surface. A doped liner is disposed between the isolation structure and the second doped region. The doped liner comprises the second dopant.