Disclosed are a heat dissipating frame structure having higher heat dissipation efficiency than the prior arts and a fabricating method thereof. Namely, the heat dissipating frame structure comprises a metal plate assembly, a part of which contacting with a heating element, and a plastic composition combined with the metal plate assembly to through the metal plate assembly receive the heat generated from the heating element.

A method for producing an optoelectronic device comprises steps for providing a package with a first surface and a second surface, wherein an electrically conductive chip carrier is embedded in the package and is accessible at the first surface and at the second surface, and for applying an insulation layer on the second surface of the package by means of aerosol deposition.

A thermally-efficient electrical assembly comprising: an electrically-conductive layer; a heat sink layer; an electrically-insulating interconnecting layer interposed between the electrically-conductive layer and heat sink layer; an electrical component in electrical communication with the electrically-conductive layer; and a metallic thermal bridge in thermal communication with the electrical component and in direct contact with the heat sink layer, thereby bypassing the electrically-insulating layer.

A semiconductor device includes a lead frame, a semiconductor element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

A semiconductor light emitting element includes: a substrate; an n-type layer; a light emitting layer; a p-type layer; a p electrode located above the p-type layer; an n electrode located in a region that is above the n-type layer and in which the light emitting layer and the p-type layer are not located; a p-electrode bump connected to the p electrode; an n-electrode bump connected to the n electrode; and an insulation bump located in at least one of a region between the n-electrode bump and the p-type layer and a region whose distance from an end of the p-type layer closer to the n-electrode bump is shorter than a distance from the end to the p-electrode bump, in a plan view of the substrate. A surface of the insulation bump opposite to a surface facing the substrate is insulated from the p electrode and the n electrode.

A light-emitting diode package structure includes a heat dissipation substrate, a redistribution layer, and multiple light-emitting diodes. The heat dissipation substrate includes multiple copper blocks and a heat-conducting material layer. The copper blocks penetrate the heat-conducting material layer. The redistribution layer is disposed on the heat dissipation substrate and electrically connected to the copper blocks. The light-emitting diodes are disposed on the redistribution layer and are electrically connected to the redistribution layer. A side of the light-emitting diodes away from the redistribution layer is not in contact with any component.

A ceramic substrate including a base having a first surface, a second surface opposite to the first surface, and a through hole having a first opening diameter at the first surface and a second opening diameter at the second surface. The first opening diameter is larger than the second opening diameter. The ceramic substrate also includes at least one solid particle disposed in the through hole, and an electrically-conductive member disposed in the through hole. A thermal conductivity of the at least one solid particle is higher than a thermal conductivity of the electrically-conductive member. The electrically-conductive member is continuous between the first surface and the second surface.

An LED lamp core, an LED chip, and a method for manufacturing the LED chip are provided. A heat conductive core (6) using the structure of taper column or taper threaded column can be conveniently installed, and solves the heat conductive problem from the standardization of the LED lamp core. A heat diffusion plate (2) is made of copper or aluminum, and the area and the thickness thereof should be large enough, so as to achieve the effect of heat diffusion. A wafer (1) is welded on the heat diffusion plate (2), reducing the temperature difference between the wafer (1) and the heat diffusion plate (2) is primary and the insulation between the same is secondary. A high voltage insulation layer (4), which is required for safety, is provided between the heat diffusion plate (2) and the heat conductive core (6), and the heat flux density between the heat diffusion plate (2) and the heat conductive core (6) has already been reduced by the heat diffusion plate (2). The technique using a wafer locating plate solves the problem of aligning weld, costly equipment and low production efficiency.

Light emitter device packages, modules and methods are disclosed having a body and a cavity that can be formed from a single substrate of material. The material can be thermally conductive and/or metallic. A light emitter device package can have at least one isolating layer creating at least a first isolated portion of the body and/or first isolated portion of the cavity. The isolating layer can be formed from the same material as the single substrate which forms the package body and cavity, and can be a layer which is thermally and electrically isolated. A light emitter or light emitter device, such as an LED chip can be mounted upon a surface of the cavity and upon at least a portion of the isolating layer.

The present invention relates to a light emitting die component formed by multilayer structures. The light emitting die component comprises a semiconductor structure (103) comprising: an n-type layer (104), an active region (106) and a p-type layer (108); a p-contact layer (110) arranged to be in electrical contact with said p-type layer (108); an n-contact layer (116) arranged to be in electrical contact with said n-type layer (104); a first dielectric layer (114) arranged to electrically isolate said p-contact layer (110) from said n-contact layer (116); a thermal spreading layer (120) comprising a first and a second region (120a, 120b) being electrically isolated from each other, wherein said first region (120a) forming an anode electrode of said light emitting die component and said second region (120b) forming a cathode electrode of said light emitting die component; a second dielectric layer (118) arranged to electrically isolate said n-contact layer (116) from said first region (120a) or to electrically isolate said p-contact layer (110) from said second region (120b); a third dielectric layer (122) arranged to electrically isolate said first and second regions (120a, 120b); and an interconnect pad (124) enabling interconnection with a submount (126).