The light-emitting element provides: a light-emitting structure, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A first electrode is disposed under a first region under the light-emitting structure and electrically connected to the second conductive semiconductor layer; a second electrode disposed under a second region under the light-emitting structure and electrically connected to the first conductive semiconductor layer. A connection electrode is connected the second electrode with the first conductive semiconductor layer. An insulating layer is disposed between the first and second electrodes; a first protective layer is disposed around the lower circumference of the light-emitting structure; and a second protective layer is disposed between the insulating layer and the light-emitting structure.

The present invention relates to a method for providing a reflective coating to a substrate for a light-emitting device, comprising the steps of: providing a substrate having a first surface portion with a first surface material and a second surface portion with a second surface material different from the first surface material; applying a reflective compound configured to attach to said first surface material to form a bond with the substrate in the first surface portion that is stronger than a bond between the reflective compound and the substrate in the second surface portion; curing said reflective compound to form a reflective coating having said bond between the reflective coating and the substrate in the first surface portion; and subjecting said substrate to a mechanical treatment with such an intensity as to remove said reflective coating from said second surface portion while said reflective coating remains on said first surface portion.

A light bulb shaped lamp according to the present invention includes a translucent base board, an LED chip mounted on the base board, a base for receiving power from outside, at least two power-supply leads for supplying power to the LED chip, and a globe partially attached to the base for housing the base board, the LED chip, and the power-supply leads. Each of the two power-supply leads extends from a side of the base toward inside of the globe and connected to the base board, and the LED chip is provided between a portion at which one of the two power-supply leads and the base board are connected and a portion at which the other of the two power-supply leads and the base board are connected.

The invention relates to a method of manufacturing optoelectronic devices including light-emitting diodes, including the steps of: a) forming a first integrated circuit chip including light-emitting diodes; b) bonding a second integrated chip to a first surface of the first chip; c) decreasing the thickness of the first chip on the side opposite to the first surface to form a second surface opposite to the first surface; d) bonding, to the second surface, a cap including a silicon wafer provided with recesses opposite the light-emitting diodes; e) decreasing the thickness of the second chip; f) decreasing the thickness of the silicon wafer before step d) or after step e), each recess being filled with a photoluminescent material; and g) sawing the structure obtained at step f) into a plurality of separate optoelectronic devices.

A method for manufacturing a high voltage LED flip chip is provided, including: providing a substrate; forming an epitaxy stacking layer on the substrate; etching the epitaxy stacking layer to form a first groove and a Mesa-platform on each chip-unit region; forming a first electrode on each of the Mesa-platforms, wherein the first electrodes on two neighboring chip-unit regions form a second groove; forming a first insulation layer covering the Mesa-platforms and the first electrodes, filling the second groove and partially filling the first grooves to form a third groove; etching the first insulation layer to form fourth groove; and forming an interconnection electrode, wherein the interconnection electrode fills the third groove and the fourth groove, two neighboring interconnection electrodes form a fifth groove, the interconnection electrode connects the first electrode on one chip-unit region and the first semiconductor layer on the other chip-unit region. LED formed has improved performance.

The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus.

The surface mounted light emitting apparatus comprises the light emitting device 10 based on GaN which emits blue light, the first resin molding 40 which integrally molds the first lead 20 whereon the light emitting device 10 is mounted and the second lead 30 which is electrically connected to the light emitting device 10, and the second resin molding 50 which contains YAG fluorescent material and covers the light emitting device 10. The first resin molding 40 has the recess 40c comprising the bottom surface 40a and the side surface 40b formed therein, and the second resin molding 50 is placed in the recess 40c. The first resin molding 40 is formed from a thermosetting resin such as epoxy resin by the transfer molding process, and the second resin molding 50 is formed from a thermosetting resin such as silicone resin.

Disclosed are a light emitting device package. The light emitting device package includes a body having recess; a first lead frame including a first and second portions on a first region of the body; a second lead frame including a third and fourth portions on a second region of the body; a third lead frame between the first and second lead frame. The body has a length of the first direction greater than a width of the second direction, wherein the second portion of the first lead frame extends toward the second lead frame and has a small width, and wherein the fourth portion of the second lead frame extends toward the first lead frame. A first light emitting device is disposed on the first portion of the first lead frame and a second light emitting device is disposed on the third portion of the second lead frame.

A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

A light emitting device package is provided. The light emitting device package may include a main body having a cavity including side surfaces and a bottom, and a first reflective cup and a second reflective cup provided in the bottom of the cavity of the main body and separated from each other. A first light emitting device may be provided in the first reflective cup, and a second light emitting device may be provided in the second reflective cup.

The present invention relates to a thermally and electrically conductive adhesive composition, which includes (A) an electrically conductive filler, (B) an epoxy resin, (C) a reactive diluent, and (D) a curing agent, wherein the component (A) is a silver powder having an average particle diameter of 1 to 10 m, the component (B) has two or more epoxy functional groups and aromatic rings in each molecule, the component (C) is a compound having two or more glycidyl ether functional groups in an aliphatic hydrocarbon chain and also having a molecular weight of 150 to 600, and the component (D) is a compound having two or more phenol functional groups in each molecule, a compound having two or more aniline functional groups in each molecule, or a mixture of these compounds, and the content of each of the component (A), (B), (C), and (D) is within a specific range.