A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer adjacent the active layer. A first electrode is electrically coupled to the first conductive semiconductor layer, and a second electrode is electrically coupled to the second conductive semiconductor layer. A channel layer is provided at a peripheral portion of a lower portion of the light emitting structure, and a conductive support member is provided adjacent to the second electrode. A first connection part is electrically coupled to the first electrode and the conductive support member, and a second connection part is electrically coupled to the second electrode.

In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side.

A light emitting device includes a resin package and a light emitting element. The resin package includes a molded resin part and a pair of leads. The molded resin part defines a part of a recessed portion. Each of the leads includes a plating layer including a first plating portion and a second plating portion. Each of the leads is exposed from the molded resin part at a lower surface of the resin package with the first plating portion being arranged in at least a part of the lead exposed at the lower surface of the resin package. Each of the leads includes an exposed portion exposed from the molded resin part at a lateral side surface of the resin package with the second plating portion being arranged in an outer periphery of the exposed portion. The light emitting element is mounted on the bottom surface of the recessed portion.

Provided is an anisotropic conductive adhesive in which excellent optical characteristics and heat dissipation characteristics are obtainable. The anisotropic conductive adhesive contains conductive particles each comprising a metal layer having Ag as a primary constituent formed on an outermost surface of a resin particle, solder particles having a smaller average particle diameter than the conductive particles, reflective insulating particles having a smaller average particle diameter than the solder particles and a binder into which the conductive particles solder particles and reflective insulating particles are dispersed. The conductive particles and the reflective insulating particles efficiently reflect light, thereby improving light-extraction efficiency of an LED mounting body. Additionally, inter-terminal solder bonding of the solder particles during compression bonding increases contact area between opposing terminals, thereby enabling achievement of high heat dissipation characteristics.

The light-emitting element provides: a light-emitting structure, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A first electrode is disposed under a first region under the light-emitting structure and electrically connected to the second conductive semiconductor layer; a second electrode disposed under a second region under the light-emitting structure and electrically connected to the first conductive semiconductor layer. A connection electrode is connected the second electrode with the first conductive semiconductor layer. An insulating layer is disposed between the first and second electrodes; a first protective layer is disposed around the lower circumference of the light-emitting structure; and a second protective layer is disposed between the insulating layer and the light-emitting structure.

A light-emitting device including a film including a plurality of holes, upper conductive patterns for covering the plurality of holes, lower conductive patterns extended from the upper conductive pattern so as to be received in the holes, a bridge part for connecting adjacent upper conductive patterns, and a light-emitting diode chip installed in each of the upper conductive patterns, so that the device may be embodied in a thin film-type as well as maximizes the optical efficiency and heat-radiation, providing an advantage of reduced manufacturing time and cost.

According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

A reflector interconnect having a front surface and a back surface is disclosed. The reflector interconnect comprises at least two segments of a reflector valve metal and at least one segment of an oxide of the reflector valve metal, wherein the at least two segments of the reflector valve metal are electrically isolated from each other by the at least one segment of the oxide of the reflector valve metal. The reflector interconnect is configured to support one or more electric components attached on the front surface in direct thermal contact with the reflector interconnect. The reflector interconnect is curved so that electromagnetic radiation radiated by at least one of the one or more electric components is reflected from the front surface and focused to a beam.

A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus. The surface mounted light emitting apparatus comprises the light emitting device 10 based on GaN which emits blue light, the first resin molding 40 which integrally molds the first lead 20 whereon the light emitting device 10 is mounted and the second lead 30 which is electrically connected to the light emitting device 10, and the second resin molding 50 which contains YAG fluorescent material and covers the light emitting device 10. The first resin molding 40 has the recess 40c comprising the bottom surface 40a and the side surface 40b formed therein, and the second resin molding 50 is placed in the recess 40c. The first resin molding 40 is formed from a thermosetting resin such as epoxy resin by the transfer molding process, and the second resin molding 50 is formed from a thermosetting resin such as silicone resin.