According to an aspect, a detection device includes a plurality of optical sensors arranged on a substrate. Each of the optical sensors includes a first photodiode and a second photodiode that is coupled in series and in an opposite direction to the first photodiode.

The invention concerns a hybrid multispectral device comprising a substrate having a first surface and a second surface, at least one first functional element having a first functional layer operable to detect or emit light of a first wavelength range, and at least one second functional element having a second functional layer operable to detect or emit light of a second wavelength range different from the first wavelength range. The first functional element is arranged on the first surface of the substrate, while the second functional element is arranged on the second surface of the substrate. The first functional element is arranged in a first lateral region of the multispectral device, and the second functional element is arranged in a second lateral region of the multispectral device. The first lateral region and the second lateral region are arranged laterally offset from each other such that the light of the second wavelength region reaches the second functional element or the light of the second wavelength region emitted from the second functional element exits the multispectral device on the first surface of the substrate without having passed through the first functional layer.

A light receiver capable of detecting the intensity of light in a certain wavelength range is provided. The light receiver includes a first light receiving element (PD1) and a second light receiving element (PD2) that have an identical spectral sensitivity characteristic, and a UV cut filter (11). Light that has passed through the UV cut filter (11) enters the first light receiving element (PD1). A subtractor is provided that calculates a difference between a photocurrent of the first light receiving element (PD1) and a photocurrent of the second light receiving element (PD2).

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is Si.sub.xGe.sub.yO.sub.z. A material of the second photo-sensing layer is Si.sub.vO.sub.w. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.

A semiconductor device that includes: a pair of photoelectric transducers that output photocurrent that accords with an intensity of received light; and a first filter film that is provided to a light incidence side of one out of the pair of photoelectric transducers, that is configured by alternatingly stacking high refractive index layers and low refractive index layers having mutually different refractive indexes, and that transmits one out of either UV-A waves or UV-B waves included in ultraviolet rays with a higher transmittance than the other out of the UV-A waves and the UV-B waves.

There is described a photodetector comprising a semiconductor material having at least a region substantially depleted of free moving carriers, the photodetector comprising: a substrate of one of n-type and p-type; at least one charge collector along a surface of the substrate and having a doping-type opposite from the substrate; a substrate contact along the surface of the substrate spaced apart from the at least one charge collector to allow current to flow between the at least one charge collector and the substrate contact; and at least one non-conductive electrode positioned along the surface of the substrate in an alternating sequence with the at least one charge collector, and separated from the substrate by an insulator, and adapted to apply an electric potential to the substrate and cause charge carriers generated therein by application of a light source to advance towards the at least one charge collector due to the effects of an electric field, such that the at least one charge collector can measure carrier concentration within the substrate.

Ambient light sensing and proximity sensing is accomplished using pairs of stacked photodiodes. Each pair includes a shallow diode with a shallow junction depth that is more sensitive to light having a shorter wavelength and a deeper diode with a deeper junction depth more sensitive to light with longer wavelengths. Photodiodes receiving light passed through cyan, yellow, and magenta filters and light passed without a color filter are used to generate red, green, and blue information through a subtractive approach. The shallow diodes are used to generate lux values for ambient light and the deeper diodes are used for proximity sensing. One or more of the deep diodes may be used in correction to lux determinations of ambient light.

A method for manufacturing a multi-spectral photodiode array in a Cd.sub.xHg.sub.1-xTe semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realising the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.

Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.