An electro-optical physiologic sensor comprises a printed circuit board (PCB) and a light emitter and a photodetector respectively mounted to the PCB. A first sensor element is disposed on the PCB and comprises a first electrode configured to contact tissue of a subject and a first light channel co-located with the first electrode, the first light channel optically coupled to the light emitter and configured to direct light into the subject's tissue. A second sensor element is disposed on the PCB and comprises a second electrode configured to contact the subject's tissue and a second light channel co-located with the second electrode, the second light channel optically coupled to the photodetector and configured to receive light from the tissue of the subject resulting from the light generated by the light emitter.

An optically-controlled switch is provided. The optically-controlled switch includes a circuit board including a transmission line and a photoconductive switching region that is adjacent to the transmission line and has electrical properties controllable by light and a laser located on the circuit board and configured to emit light toward the photoconductive switching region.

An optically-controlled switch is provided. The optically-controlled switch includes a circuit board including a transmission line and a photoconductive switching region that is adjacent to the transmission line and has electrical properties controllable by light and a laser located on the circuit board and configured to emit light toward the photoconductive switching region.

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

An optical sensor device is disclosed. The optical sensor device includes a light-emitting module, a first structure, a second structure and a mask layer, the first and second structures are formed on opposing ends of light-emitting module and cover portions of light-emitting module, the light-emitting module includes a light exit region, a photosensitive member and an optical filter layer, the light exit region and photosensitive member are both located on a side of light-emitting module close to first structure, the first structure exposes light exit region and photosensitive member, the optical filter layer wraps exposed portion of photosensitive member, the mask layer is arranged on first structure and surface of light-emitting module facing first structure, and the mask layer exposes light exit region and photosensitive member, avoiding influence of external light on optical sensor device through mask layer, so as to improve optical performance of optical sensor device.

An optical sensor device is disclosed. The optical sensor device includes a light-emitting module, a first structure, a second structure and a mask layer, the first and second structures are formed on opposing ends of light-emitting module and cover portions of light-emitting module, the light-emitting module includes a light exit region, a photosensitive member and an optical filter layer, the light exit region and photosensitive member are both located on a side of light-emitting module close to first structure, the first structure exposes light exit region and photosensitive member, the optical filter layer wraps exposed portion of photosensitive member, the mask layer is arranged on first structure and surface of light-emitting module facing first structure, and the mask layer exposes light exit region and photosensitive member, avoiding influence of external light on optical sensor device through mask layer, so as to improve optical performance of optical sensor device.

There is provided a semiconductor package. The semiconductor package includes: a semiconductor chip; a mold configured to encapsulate the chip; a redistribution layer; and an optical device electrically connected to the chip through the redistribution layer. The mold is formed with an optical path passing through the mold, and light is input to or output from the optical device through the optical path.

The present disclosure relates to a light sensor comprising: an optical device comprising a first face configured to receive light and a second face, the device being configured, when the first face receives the light at a first wavelength between 1100 nm and 1600 nm, to convert the received light to the light at a second wavelength between 600 nm and 1000 nm, and to emit the light at the second wavelength through the second face; and at least one pixel having a silicon photoconversion area arranged opposite the second face of the optical device.

An optocoupler includes a GaN-based Light Emitting Diode (LED) and a GaN-based photo-detector, where at least one of the LED and photo-detector is a flip chip. In some embodiments, the photo-detector comprises a GaN-based LED configured to operate as a photo-detector.