H10F55/255

Semiconductor optocoupler
12543601 · 2026-02-03 · ·

An optocoupler includes a GaN-based Light Emitting Diode (LED) and a GaN-based photo-detector, where at least one of the LED and photo-detector is a flip chip. In some embodiments, the photo-detector comprises a GaN-based LED configured to operate as a photo-detector.

Integrated, flexible, implantable, optical neural interrogation apparatus, computer-accessible medium, system, and method for use and implementation thereof

Exemplary embodiments of the present disclosure provide for an integrated, flexible, implantable, optical neural interrogation apparatus, computer-accessible medium, system, and method for use thereof. An integrated, flexible, fully-implantable, all-optical neural interrogation apparatus can include, e.g., a 2-dimensional (2D) planar array of optical photodetectors on an integrated electronic chip, the integrated electronic chip including control logic and image-capturing electronic circuitry, an amplitude or phase optical imaging mask for imaging, and a biocompatible packaging.

Integrated, flexible, implantable, optical neural interrogation apparatus, computer-accessible medium, system, and method for use and implementation thereof

Exemplary embodiments of the present disclosure provide for an integrated, flexible, implantable, optical neural interrogation apparatus, computer-accessible medium, system, and method for use thereof. An integrated, flexible, fully-implantable, all-optical neural interrogation apparatus can include, e.g., a 2-dimensional (2D) planar array of optical photodetectors on an integrated electronic chip, the integrated electronic chip including control logic and image-capturing electronic circuitry, an amplitude or phase optical imaging mask for imaging, and a biocompatible packaging.

Compact optoelectronic transmitter and receiver device

The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.

Compact optoelectronic transmitter and receiver device

The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
20260101604 · 2026-04-09 ·

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a bulk silicon substrate, an oxide layer, a patterned polycrystalline silicon layer and a patterned epitaxial layer. The oxide layer is disposed above the bulk silicon substrate, the patterned polycrystalline silicon layer is disposed above the oxide layer, and the patterned epitaxial layer is disposed above the patterned polycrystalline silicon layer. The patterned epitaxial layer has an optoelectronic component and a control circuit. The optoelectronic component and the control circuit are spatially isolated from each other due to the patterned polycrystalline silicon layer.

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
20260101604 · 2026-04-09 ·

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a bulk silicon substrate, an oxide layer, a patterned polycrystalline silicon layer and a patterned epitaxial layer. The oxide layer is disposed above the bulk silicon substrate, the patterned polycrystalline silicon layer is disposed above the oxide layer, and the patterned epitaxial layer is disposed above the patterned polycrystalline silicon layer. The patterned epitaxial layer has an optoelectronic component and a control circuit. The optoelectronic component and the control circuit are spatially isolated from each other due to the patterned polycrystalline silicon layer.

INTERFEROMETER IN OPTOELECTRONIC PACKAGE

An optoelectronic package for measuring distance, tip, and tilt of an object relative to a detector. The optoelectronic package comprises a carrier; a photodiode element (photodiode elements) located on the carrier and having a center opening; a vertical-cavity surface-emitting laser (VCSEL) located in the center opening and directing light rays toward the object; and an interference generating optical element positioned between the photodiode element and the object. Light passes through the optical element from the VCSEL creating a ring of measured light which reflects off the surface of the object and combines with a ring of reflecting reference light to produce interference fringes on the photodediode elements with varying light intensity, which correspond to displacement and angular tip and tilt of the surface of the object. The measurement of these variations will be interpreted by a computational element to produce a value of distance, tip, and tilt of the object.

INTERFEROMETER IN OPTOELECTRONIC PACKAGE

An optoelectronic package for measuring distance, tip, and tilt of an object relative to a detector. The optoelectronic package comprises a carrier; a photodiode element (photodiode elements) located on the carrier and having a center opening; a vertical-cavity surface-emitting laser (VCSEL) located in the center opening and directing light rays toward the object; and an interference generating optical element positioned between the photodiode element and the object. Light passes through the optical element from the VCSEL creating a ring of measured light which reflects off the surface of the object and combines with a ring of reflecting reference light to produce interference fringes on the photodediode elements with varying light intensity, which correspond to displacement and angular tip and tilt of the surface of the object. The measurement of these variations will be interpreted by a computational element to produce a value of distance, tip, and tilt of the object.

ELECTRO-OPTICAL PHYSIOLOGIC SENSOR

An electro-optical physiologic sensor comprises a printed circuit board (PCB) and a light emitter and a photodetector respectively mounted to the PCB. A first sensor element is disposed on the PCB and comprises a first electrode configured to contact tissue of a subject and a first light channel co-located with the first electrode, the first light channel optically coupled to the light emitter and configured to direct light into the subject's tissue. A second sensor element is disposed on the PCB and comprises a second electrode configured to contact the subject's tissue and a second light channel co-located with the second electrode, the second light channel optically coupled to the photodetector and configured to receive light from the tissue of the subject resulting from the light generated by the light emitter.