An electrical power converter can include a plurality of layers disposed on a substrate. An emitter, including a first semiconductor junction that is formed at an interface between a first pair of adjacent layers, can produce light in response to a first electrical signal. An absorber, including a second semiconductor junction that is formed at an interface between a second pair of adjacent layers, can absorb at least some of the light. Circuitry can produce a second electrical signal in response to the absorbed light. The second electrical signal can be substantially proportional to the first electrical signal and can be electrically isolated from the first electrical signal. Because the light can remain within the layers during use, the electrical power converter can have a higher efficiency than a comparable device that propagates the light through at least one interface between air and a semiconductor material.

The semiconductor laser device comprises a laser part, a waveguide for propagating laser light emitted by the laser part, and a photodetector for detecting the laser light which are formed on the same semiconductor substrate. The photodetector includes a p-type contact layer which is formed above the side of the waveguide on the side opposite to the semiconductor substrate and is connected to an anode electrode, an n-type contact layer connected to a cathode electrode, and an undoped layer formed between the p-type contact layer and the n-type contact layer. The undoped layer and the n-type contact layer in the photodetector include a main light receiving part disposed above the waveguide so as to encompass the waveguide, and an enlarged part disposed so as not to encompass the waveguide while connected to the main light receiving part.

The semiconductor laser device comprises a laser part, a waveguide for propagating laser light emitted by the laser part, and a photodetector for detecting the laser light which are formed on the same semiconductor substrate. The photodetector includes a p-type contact layer which is formed above the side of the waveguide on the side opposite to the semiconductor substrate and is connected to an anode electrode, an n-type contact layer connected to a cathode electrode, and an undoped layer formed between the p-type contact layer and the n-type contact layer. The undoped layer and the n-type contact layer in the photodetector include a main light receiving part disposed above the waveguide so as to encompass the waveguide, and an enlarged part disposed so as not to encompass the waveguide while connected to the main light receiving part.

Energy storage device comprising multiple solid state dielectric layers that can be used for high density electrical energy storage.

Energy storage device comprising multiple solid state dielectric layers that can be used for high density electrical energy storage.

A photocoupler includes a light emitting part, a light receiving part, and a housing. The light emitting part is a discrete part includes a light emitting element, an input side terminal, and a first covering part covers the light emitting element. The light receiving part is a discrete part includes a light receiving element, an output side terminal, and a second covering part covers the light receiving element. The housing constitutes an internal space accommodates the light emitting element and the light receiving element. The housing includes an input side through hole and an output side through hole provided at different positions. The input side terminal is inserted into the input side through hole and protrudes from the internal space to outside of the housing. The output side terminal is inserted into the output side through hole and protrudes from the internal space to outside of the housing.

An electrode system and a complementary metal-oxide-semiconductor (CMOS)-based device including the same are provided. The electrode system includes a light-emitting diode (LED) display layer. a first photoconductive layer on the LED display layer, a second photoconductive layer on the first photoconductive layer, and an electrode layer.

An electrode system and a complementary metal-oxide-semiconductor (CMOS)-based device including the same are provided. The electrode system includes a light-emitting diode (LED) display layer. a first photoconductive layer on the LED display layer, a second photoconductive layer on the first photoconductive layer, and an electrode layer.

A bio-sensing device is provided, which includes a carrier substrate, a light source disposed on the carrier substrate, a photodiode sensor disposed on the carrier substrate and laterally spaced apart from the light source, a light-blocking wall disposed on the carrier substrate and located between the light source and the photodiode sensor, a cover glass, a dual-band filter coated on a front surface of the cover glass, a first optical adhesive formed on a back surface of the cover glass, and a second optical adhesive covering the carrier substrate, the light source, the photodiode sensor and the light-blocking wall, and being used to be bonded with the first optical adhesive. The first optical adhesive has been cured when the second optical adhesive is bonded with the first optical adhesive, and the second optical adhesive is cured by irradiation with ultraviolet light after being in contact with the first optical adhesive.

A detection device includes a substrate, a light-emitter, and a light receiver. The substrate includes a first surface area and a second surface area, in which the first surface area has a first reflectance greater than a second reflectance of the second surface area. The light emitter is disposed on the first surface area, and the light receiver is disposed on the second surface area. The light receiver has a third reflectance which is substantially the same as the second reflectance of the second surface area.