A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer.

A unit pixel of a Red-Green-Cyan-Blue (RGCB) microdisplay is disclosed. In the unit pixel, sub-pixels that form blue light, green light, cyan light, and red light, are vertically stacked on a growth substrate. Accordingly, the unit pixel area may be reduced, and pixel transfer processing is facilitated.

A display device includes a first electrode and a second electrode spaced apart from each other, and light emitting elements disposed between the first electrode and the second electrode. Each of the light emitting elements include a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. Each of the light emitting elements emits light with a wavelength in a range of about 464 nm to about 468 nm at a current density in a range of about 0.5 A/cm.sup.2 to about 100 A/cm.sup.2, and has a maximum external quantum efficiency greater than or equal to about 15%.

A method and structure for forming an array of LED devices is disclosed. The LED devices in accordance with embodiments of the invention may include a confined current injection area in which a current spreading layer protrudes away from a cladding layer in a pillar configuration so that the cladding layer is wider than the current spreading layer pillar.

The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in regions (310) adjacent to the guardsheet (150), without reducing the optical reflectivity of any part of the device. This current flow may be inhibited by increasing the resistance of the p-layer that is coupled to the p-contact (140) along the edges and in the corners of contact area. In an example embodiment, the high-resistance region (130) is produced by a shallow dose of hydrogen-ion (H+) implant after the p-contact (140) is created. Similarly, a resistive coating may be applied in select regions between the p-contact and the p-layer.

Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.

A light-emitting element comprises: a first semiconductor stack having a first conductivity type; an active layer formed on the first semiconductor stack; a second semiconductor stack having a second conductivity type formed on the active layer; and a first current-spreading layer having the first conductivity type interposed in the second semiconductor stack.

A semiconductor optical device includes: a ridge stripe structure portion 20 in which a first compound semiconductor layer 31, an active layer 32, and a second compound semiconductor layer 32 are stacked and which has a first end surface 21 which emits light and a second end surface 22 opposite to the first end surface 21; and a current regulation region 41 provided to be adjacent to at least one of ridge stripe adjacent portions 40 positioned at both sides of the ridge stripe structure portion 20, at the second end surface side, and to be away from the ridge stripe structure portion 20. A bottom surface of the current regulation region 41 is under the active layer 33, and a top surface of the ridge stripe adjacent portion 40 excluding the current regulation region 41 is above the active layer 33.

Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic contact characteristic with respect to a semiconductor layer and a method of manufacturing the light emitting device. A transparent electrode of a light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material applied to the material, so that it is possible to obtain high transmittance with respect to light in a UV wavelength range.

Provided is a vertical type light emitting device and a method of manufacturing the same. A transparent electrode having high transmittance with respect to light in the entire range and constructed by using a resistance change material of which resistance state is to be changed from a high resistance state to a low resistance state if a voltage exceeding a threshold voltage inherent in a material is applied so that conducting filaments are formed is formed between an electrode pad and a semiconductor layer of a light emitting device. The transparent electrode has high transmittance with respect to the light in a UV wavelength range as well as in a visible wavelength range generated in the light emitting device. Since the conductivity of the transparent electrode is heightened due to the formation of the conducting filaments, the transparent electrode has good ohmic contact characteristic with respect to a semiconductor layer.