In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

A display device includes a first epitaxial structure vertically stacked, a first light emitting element including a second epitaxial structure and a third epitaxial structure, a second light emitting element spaced apart from the first light emitting element and including the first epitaxial structure, a first passivation layer arranged to surround a sidewall of the first light emitting element, and a second passivation layer arranged to surround a sidewall of the second light emitting element. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure may include a structure in which a first semiconductor layer of a first conductivity type, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity type are sequentially stacked.

A light-emitting diode (LED) chip with reflective layers having high reflectivity. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer.

Disclosed are an LED having a multi-series junction structure and improved light characteristics and a method of manufacturing the same. An LED includes a substrate, a buffer layer deposited on the substrate, a first n type semiconductor layer, a first active layer, and a first p type semiconductor layer sequentially deposited on the buffer layer, a tunnel junction layer deposited on the p type semiconductor layer, a second n type semiconductor layer, a second active layer, and a second p type semiconductor layer sequentially deposited on the tunnel junction layer, ITO formed on the second p type semiconductor layer, and a passivation layer deposited on the side or front of the first n type semiconductor layer to the ITO. Etching is performed from the ITO to one location of the first n type semiconductor layer so that the ITO to the first n type semiconductor layer have a mesa structure.

The present invention relates to a light-emitting diode (LED) element, and more particularly, to an ultra-thin LED element, and inkjet ink and a light source including the same.

The present invention relates to a light-emitting diode (LED) element, and more particularly, to an ultra-thin LED element, and inkjet ink and a light source including the same.

A micro light-emitting diode includes an epitaxial structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, and has a first ion implantation region. A first distance is present between a surface of the first type semiconductor layer and a top surface of the light-emitting layer adjacent to the surface. A second distance is present between the surface of the first type semiconductor layer and a first bottom side of the first ion implantation region. The second distance is greater than the first distance and less than a height of a mesa. A first included angle having an absolute value between 0 and 15 degrees is present between a first extension direction of a first inner side of the first ion implantation region and a normal direction of the light-emitting layer.

A micro light-emitting diode includes an epitaxial structure and an insulating layer. The epitaxial structure includes a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, and has a first ion implantation region. A first distance is present between a surface of the first type semiconductor layer and a top surface of the light-emitting layer adjacent to the surface. A second distance is present between the surface of the first type semiconductor layer and a first bottom side of the first ion implantation region. The second distance is greater than the first distance and less than a height of a mesa. A first included angle having an absolute value between 0 and 15 degrees is present between a first extension direction of a first inner side of the first ion implantation region and a normal direction of the light-emitting layer.

In a light-emitting element including a first InAs layer that is undoped or doped with an n-type dopant; an active layer including one or more InAs.sub.ySb.sub.1-y layers (0<y<1); and a second InAs layer doped with a p-type dopant, an Al.sub.xIn.sub.1-xAs electron blocking layer (0.05x0.40) with a thickness of 5 nm to 40 nm is provided between the active layer and the second InAs layer.

A light emitting module includes at least one light emitting device, wherein the light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an electron blocking layer disposed between the active layer and the second conductivity type semiconductor layer, and the electron blocking layer includes at least one shading region having a lower thickness than an adjacent region.