The presented devices and methods are directed to efficient and effective photon emission. In one embodiment, high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) are created using plasma-assisted molecular beam epitaxy. The device heterostructure was grown under slightly Ga-rich conditions to promote the formation of nanoscale clusters in the active region. The nanoscale clusters can act as charge containment configurations. In one exemplary implementation, a device operates at approximately 255 nm light emission with a maximum external quantum efficiency (EPE) of 7.2% and wall-plug efficiency (WPE) of 4%, which are nearly one to two orders of magnitude higher than previously reported tunnel junction devices operating at this wavelength. The devices exhibit highly stable emission originating from highly localized carriers in Ga-rich regions formed in the active region, with nearly constant emission peak with increasing current density up to 200 A/cm.sup.2, due to the strong charge carrier confinement related to the presence of nanoclusters (e.g., Ga-rich) and radiative emission originating from highly localized carriers in Ga-rich regions formed in the active region.

The presented devices and methods are directed to efficient and effective photon emission. In one embodiment, high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) are created using plasma-assisted molecular beam epitaxy. The device heterostructure was grown under slightly Ga-rich conditions to promote the formation of nanoscale clusters in the active region. The nanoscale clusters can act as charge containment configurations. In one exemplary implementation, a device operates at approximately 255 nm light emission with a maximum external quantum efficiency (EPE) of 7.2% and wall-plug efficiency (WPE) of 4%, which are nearly one to two orders of magnitude higher than previously reported tunnel junction devices operating at this wavelength. The devices exhibit highly stable emission originating from highly localized carriers in Ga-rich regions formed in the active region, with nearly constant emission peak with increasing current density up to 200 A/cm.sup.2, due to the strong charge carrier confinement related to the presence of nanoclusters (e.g., Ga-rich) and radiative emission originating from highly localized carriers in Ga-rich regions formed in the active region.

A light-emitting device includes a first electrode, a second electrode, a light-emitting layer, and a composite material layer. The first electrode and the second electrode are arranged oppositely to each other. The light-emitting layer is arranged between the first electrode and the second electrode. The composite material layer is arranged between the second electrode and the light-emitting layer. A material for forming the composite material layer includes a titanium dioxide nanoparticle and a ligand. The ligand has a structure of ##STR00001##
The ligand is bonded to the titanium dioxide nanoparticle by a sulfur anion. n is an integer of 08.

A semiconductor device package includes a carrier, an emitting element and a first package body. The carrier includes a first surface and a second surface opposite to the first surface. The emitting element is disposed on the first surface of the carrier. The first package body is disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.

A semiconductor device package includes a carrier, an emitting element and a first package body. The carrier includes a first surface and a second surface opposite to the first surface. The emitting element is disposed on the first surface of the carrier. The first package body is disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.

A semiconductor light-emitting device includes a first light-emitting laminate including a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, and a first mesa region in which a boundary is at least partially demarcated by an etched region. The semiconductor light-emitting device further includes a first electrode within the etched region, a first transparent electrode in contact with the second conductivity type semiconductor layer, and a bridge electrode on the first transparent electrode. The first transparent electrode includes a first portion adjacent to the bridge electrode and a second portion further away from the bridge electrode, and the first portion is spaced apart from a first edge of the first mesa region by a first distance, and the second portion is spaced apart from a second edge of the first mesa region by a second distance greater than the first distance.

A zinc-containing oxide nanoparticle including zinc, an additional metal other than zinc, and an oxo anion of vanadium (V) on a surface of the nanoparticle, a method of preparing the zinc-containing oxide nanoparticle, an electroluminescent diode including the zinc-containing oxide nanoparticle, and a display device including the electroluminescent diode.

A zinc-containing oxide nanoparticle including zinc, an additional metal other than zinc, and an oxo anion of vanadium (V) on a surface of the nanoparticle, a method of preparing the zinc-containing oxide nanoparticle, an electroluminescent diode including the zinc-containing oxide nanoparticle, and a display device including the electroluminescent diode.

A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.