A blue organic light emitting device including a first electrode, a second electrode facing the first electrode, a first charge generating layer disposed between the first electrode and the second electrode, a first emission layer disposed between the first electrode and the first charge generating layer and emitting first blue light having a first wavelength region, and a second emission layer disposed between the first charge generating layer and the second electrode and emitting second blue light having a second wavelength region different from the first wavelength region. The blue organic light emitting device finally emits blue light.

Provided is a vertical type light emitting device and a method of manufacturing the same. A transparent electrode having high transmittance with respect to light in the entire range and constructed by using a resistance change material of which resistance state is to be changed from a high resistance state to a low resistance state if a voltage exceeding a threshold voltage inherent in a material is applied so that conducting filaments are formed is formed between an electrode pad and a semiconductor layer of a light emitting device. The transparent electrode has high transmittance with respect to the light in a UV wavelength range as well as in a visible wavelength range generated in the light emitting device. Since the conductivity of the transparent electrode is heightened due to the formation of the conducting filaments, the transparent electrode has good ohmic contact characteristic with respect to a semiconductor layer.

A semiconductor device is disclosed, and the semiconductor device comprises: a semiconductor layer; and a transparent electrode which is formed from a resistance switching material and is formed on one side of the semiconductor layer, wherein the transparent electrode includes a channel on which an electron is capable of hopping and a conductive path formed by applying a voltage that is a threshold voltage or more, and the threshold voltage for forming the conductive path is lowered by the channel.

Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

A light-emitting element, comprises a light-emitting stack comprising an active layer; a window layer on the light-emitting stack, wherein the window layer has a surface opposite to the light-emitting stack; and an insulative layer on the surface, wherein the surface comprises a cavity and the insulative layer substantially conformally covering the cavity, and wherein the insulative layer has a first refractive index equal to or smaller than 1.4.

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission efficiency. The Group III nitride semiconductor light-emitting device includes a base layer, an n-type superlattice layer, a light-emitting layer, and a p-type cladding layer, each of the layers being made of Group III nitride semiconductor. An electron injection adjusting layer comprising a single Al.sub.xGa.sub.1-xN (0<x<1) layer and having a thickness of 5 to 30 is formed in the base layer. The n-type superlattice layer is a superlattice layer having a periodic structure of an In.sub.yGa.sub.1-yN (0<y<1) layer, an i-GaN layer, and an n-GaN layer. The electron injection adjusting layer has a thickness of 5 to 30 and an Al composition ratio of 0.15 to 0.5.

A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer.

A semiconductor light-emitting device including a P-type semiconductor cladding layer, an N-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The P-type semiconductor cladding layer is doped with magnesium. The light-emitting layer is disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer. The hole injection layer is disposed between the P-type semiconductor cladding layer and the light-emitting layer. The hole injection layer includes a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers. The chemical formula of each of the semiconductor material layers is Al.sub.xIn.sub.yGa.sub.1-x-yN, and 0x1, 0y1, and 0x+y1.

Solid state lighting (SSL) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.