After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.

Provided are novel methods of fabricating photovoltaic modules using pressure sensitive adhesives (PSA) to secure wire networks of interconnect assemblies to one or both surfaces of photovoltaic cells. A PSA having suitable characteristics is provided near the interface between the wire network and the cell's surface. It may be provided together as part of the interconnect assembly or as a separate component. The interconnect assembly may also include a liner, which may remain as a part of the module or may be removed later. The PSA may be distributed in a void-free manner by applying some heat and/or pressure. The PSA may then be cured by, for example, exposing it to UV radiation to increase its mechanical stability at high temperatures, in particular at a, for example the maximum, operating temperature of the photovoltaic module. For example, the modulus of the PSA may be substantially increased during this curing operation.

In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

A solar cell includes a substrate having a front surface and a back surface; an emitter formed on the front surface of the substrate; a plurality of first electrodes positioned on the emitter and extended in first direction; a plurality of first bus lines positioned on the emitter and extended in second direction crossing to the first direction; a plurality of back surface field regions formed on the back surface of the substrate and extended in the first direction; a plurality of second electrodes positioned on the plurality of back surface field regions and extended in the first direction; and, a plurality of second bus lines extended in the second direction.

A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

The manufacturing method of a solar cell includes forming a photoelectric conversion unit and forming an electrode connected to the photoelectric conversion unit. The step of forming the electrode includes forming a seed formation layer connected to the photoelectric conversion unit, forming an anti-oxidation layer on the seed formation layer, performing a thermal process such that a material of the seed formation layer and a material of the photoelectric conversion unit react with each other to form a chemical bonding layer at a portion at which the seed formation layer and the photoelectric conversion unit are adjacent to each other, forming a conductive layer and a capping layer on the seed formation layer in a state in which a mask is used on the seed formation layer, and patterning the seed formation layer using either the conductive layer or the capping layer as a mask.

A hybrid all-back-contact (ABC) solar cell and method of fabricating the same. The method comprises: forming one or more patterned insulating passivation layers over at least a portion of an absorber of the solar cell; forming one or more hetero junction layers over at least a portion of the one or more patterned insulating passivation layers to provide one or more heterojunction point or line-like contacts between the one or more heterojunction layers and the absorber of the solar cell; forming one or more first metal regions over at least a portion of the one or more heterojunction layers; forming a doped region within the absorber of the solar cell; and forming one or more second metal regions over at least a portion of the doped region and contacting the doped region to provide one or more homojunction contacts.

A photovoltaic device, particularly a solar cell, comprises an interface between a layer of Group III-V material and a layer of Group IV material with a thin silicon diffusion barrier provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells.

In accordance with embodiments disclosed herein, there are provided methods and systems for implementing damage-and-resist-free laser patterning of dielectric films on textured silicon. For example, in one embodiment, such means include means for depositing a Silicon nitride (SiNx) or SiOx (silicon oxide) layer onto a crystalline silicon (c-Si) substrate by a Plasma Enhanced Chemical Vapor Deposition (PECVD) processing; depositing an amorphous silicon (a-Si) film on top of the SiNx or SiOx layer; patterning the a-Si film to define an etch mask for the SiNx or SiOx layer; removing the SiNx or SiOx layer via a Buffered Oxide Etch (BOE) chemical etch to expose the c-Si surface; removing the a-Si mask with a hydrogen plasma etch in a PECVD tool to prevent current loss from the mask; and plating the exposed c-Si surface with metal contacts. Other related embodiments are disclosed.

Provided is a coating composition excellent in antifouling properties, transparency and hydrophilicity, wherein the coating composition contains (A) a metal oxide particle having a number average particle size of 1 nm to 400 nm; and (B) a polymer particle, in which the content of an aqueous-phase component in the component (B), represented by the expression (I), is 20 mass % or less, where (I) (%)=(dry mass of a filtrate obtained by filtering the component (B) at a molecular cutoff of 50,000)(100total mass of solid content)/(mass of the filtratedry mass of the filtrate)100/the total mass of solid content.