A solar cell structure may provide a front surface that may include a front passivation layer and front anti-reflective layer. The solar cell structure may provide both contacts on a rear surface. In some cases, the rear surface may optionally provide passivation, doped, and/or transparent conductive oxide layers. The rear surface also provides a multilayer foil assembly (MFA). The MFA provides a first metal foil in electrical communication with doped regions of the rear surface of the substrate, such as base or emitter regions. The MFA may also provide a second metal foil that is spaced apart from the first metal foil by a dielectric layer. The first metal foil and/or the dielectric layer may include openings through the entirety of these layers, and these openings may be utilized to form laser fired contacts electrically coupled to the second metal foil, which is electrically isolated from the first metal foil. In some embodiments, it may be desirable for the second foil to provide openings as well, which can be utilized to form laser fired contacts for the first metal foil.

The present disclosure provides a back-contact solar cell, a fabrication method, and a solar-cell assembly. In one aspect, a back-contact solar cell includes a solar-cell body and an isolating groove. The solar-cell body includes a silicon substrate, a first semiconductor layer in a first region of a back surface of the silicon substrate, a second semiconductor layer having a portion in a second region of the back surface, and a transparent conductive film layer stacked on the first and second semiconductor layers. The isolating groove extends through the second semiconductor layer and the transparent conductive film layer. An area of a cross section of the isolating groove decreases towards the silicon substrate, and the cross section is parallel to the silicon substrate.

The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitride atoms in the at least one silicon oxynitride layer. The first silicon oxide layer is disposed between the substrate and the at least one aluminum oxide layer, and a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm.

Provided is a solar cell including: a silicon substrate, a passivation layer, a first antireflection layer, a second antireflection layer, a third antireflection layer, a tunneling dielectric layer formed over the rear surface, and a doped conductive layer formed over the tunneling dielectric layer. The silicon substrate includes at least one of P, Bi, Sb or As. The passivation layer includes an Al.sub.xO.sub.y material and is formed over the front surface, where 1/3x/y3. The first antireflection layer includes a S.sub.iN.sub.j material and is formed over the passivation layer, where 0.5i/j10. The second antireflection layer includes a SicN.sub.dO.sub.e material and is formed over the first antireflection layer, where 0.5c/d10, and 0.25d/e2. The third antireflection layer includes a Si.sub.aO.sub.b material and is formed over the second antireflection layer, where 0.5a/b3.

The present disclosure relates to a solar cell, a sliced cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conductive layer, a first passivation film layer, and a first dielectric layer; the doped conductive layer being arranged on a first surface of the substrate; the first passivation film layer and the first dielectric layer being sequentially stacked on a side of the doped conductive layer facing away from the substrate; and the doped conductive layer, the first passivation film layer, and the first dielectric layer all covering the first surface of the substrate; wherein the substrate further includes a plurality of first side surfaces adjacent to the first surface, and the first passivation film layer further covers at least part of surfaces of the plurality of first side surfaces. The solar cell, the photovoltaic module, and the photovoltaic system in the present disclosure can reduce recombination losses at side edges of the solar cell and improve efficiency.

A solar cell, a method for preparing the same and an electrical device are provided. The method for preparing the solar cell includes following steps: providing a substrate, which includes a first surface and a second surface opposite to the first surface; forming a protective material layer on the first surface, and removing part of the protective material layer on a preset first doped region to prepare a protective layer; performing a first doping process in the preset first doped region on the substrate to prepare a substrate including a first doped region. A width of the first doped region is in a range of 10 m to 35 m.

A solar cell according to an embodiment of the present disclosure includes a first passivation layer including a first aluminum oxide layer positioned on a first conductivity-type region composed of a polycrystalline silicon layer having an n-type conductivity and having hydrogen, and a first dielectric layer positioned on the first aluminum oxide layer and including a material different from the first aluminum oxide layer.

A device includes a bottom contact layer on a substrate, an absorber layer on the bottom contact layer, a cap layer on the absorber layer, a hole blocker layer on the cap layer, and a top contact layer on the hole blocker layer. The absorber layer includes oxygen-annealed copper, indium, gallium and selenium. The device has a quantum efficiency greater than about 50%, measured at a voltage of about 1 volt and at a wavelength of about 940 nanometers.

Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell has a stacked structure in the first direction including: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a selective passivation layer, and one or more electrodes. The selective passivation layer covers a portion of a surface of the substrate away from the intrinsic amorphous silicon layer and includes a plurality of passivation contact structures arranged at intervals in a second direction. Each passivation contact structure includes a tunneling layer and a second doped conductive layer stacked in the first direction. The electrodes are formed on a surface of the selective passivation layer away from the substrate and are in ohmic contact with second doped conductive layers.

The solar cell includes a substrate having electrode regions and non-electrode regions defined alternatively, where a surface of the electrode regions has a first surface structure, a surface of the non-electrode regions has a second surface structure, the first surface structure has a smaller roughness than the second surface structure, and the second surface structure includes multiple first protrusion structures. The solar cell further includes a tunneling dielectric layer, and a first doped conductive layer arranged on the tunneling dielectric layer. The solar cell further includes a passivation layer arranged on the non-electrode regions and the first doped conductive layer and a first electrode arranged in the electrode regions. The first electrode penetrates the passivation layer to be in electrical contact with the first doped conductive layer.