Provided is a coating composition excellent in antifouling properties, transparency and hydrophilicity, wherein the coating composition contains (A) a metal oxide particle having a number average particle size of 1 nm to 400 nm; and (B) a polymer particle, in which the content of an aqueous-phase component in the component (B), represented by the expression (I), is 20 mass % or less, where (I) (%)=(dry mass of a filtrate obtained by filtering the component (B) at a molecular cutoff of 50,000)(100total mass of solid content)/(mass of the filtratedry mass of the filtrate)100/the total mass of solid content.

Die-cutting approaches for foil-based metallization of solar cells, and the resulting solar cells are disclosed herein. Die-cutting approaches for foil-based metallization of solar cells include forming a plurality of semiconductor regions in or above a substrate and forming a patterned damage buffer in alignment with locations between the plurality of semiconductor regions. Additionally, a metal layer comprising a metal seed layer and/or metal foil is formed over the patterned damage buffer. The metal layer is cut by a cutting die at locations between the plurality of semiconductor regions by applying a mechanical force to the cutting die.

A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized to ablate, transfer material, and/or laser-dope or laser fire contacts. Laser ablation can be utilized to remove and pattern openings in a passivated or emitter layer. Laser transferring may then be utilized to transfer dopant and/or contact materials to the patterned openings, thereby forming an interdigitated finger pattern. The laser processing system may also be utilized to plate a conductive material on top of the transferred dopant or contact materials.

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.

A method for passivating the surface of crystalline iron disulfide (FeS.sub.2) by encapsulating it within an epitaxial zinc sulfide (ZnS) matrix. Also disclosed is the related product comprising FeS.sub.2 encapsulated by a ZnS matrix in which the sulfur atoms at the FeS.sub.2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by a ZnS matrix.

A passivated iron disulfide (FeS.sub.2) surface encapsulated by an epitaxial zinc sulfide (ZnS) capping layer or matrix is provided. Also disclosed are methods for passivating the surface of crystalline iron disulfide by encapsulating it with an epitaxial zinc sulfide capping layer or matrix. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by ZnS.

A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.

Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.