Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers, and the resulting solar cells, are described. In an example, a back contact solar cell includes an N-type single crystalline silicon substrate having a light-receiving surface and a back surface. Alternating continuous N-type emitter regions and segmented P-type emitter regions are disposed on the back surface of the N-type single crystalline silicon substrate, with gaps between segments of the segmented P-type emitter regions. Trenches are included in the N-type single crystalline silicon substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions. An approximately Gaussian distribution of P-type dopants is included in the N-type single crystalline silicon substrate below the segmented P-type emitter regions. A maximum concentration of the approximately Gaussian distribution of P-type dopants is approximately in the center of each of the segmented P-type emitter regions between first and second sides of each of the segmented P-type emitter regions. Substantially vertical P/N junctions are included in the N-type single crystalline silicon substrate at the trenches formed in locations of the gaps between segments of the segmented P-type emitter regions.

A solar cell module includes a plurality of solar cells including a first solar cell and a second solar cell adjacent to each other, wherein each of the plurality of solar cells including at least one first current collector and at least one second current collector, wherein the at least one first current collector and the at least one second current collector being positioned on a non-light incident surface of each of the plurality of solar cells, which is opposite to a light incident surface of each of the plurality of solar cells, an insulating film having a conductive pattern part positioned on the insulating film, wherein the conductive pattern part including a first pattern which is connected to the at least one first current connector 161 of the plurality of solar cells and a second pattern which is connected to the at least one second current connector of the plurality of solar cells, wherein the first pattern being spaced apart from the second pattern; and an insulating sheet between the an insulating film and the non-light incident surface of the plurality of solar cells.

The invention relates to a method for preventing an electrical shortage between at least two layers of a semiconductor layer stack attached by the surface of one of its layers to a substrate via a conductive adhesive by providing an isolating layer on the side walls of the stack or by removing excess material after attaching the stack to the substrate. The invention also relates to a thin substrate CPV cell and to a solar cell assembly.

A bifacial solar cell includes a substrate of an n-type; an emitter layer positioned on a first surface of the substrate; a plurality of first electrodes locally positioned on the emitter layer and electrically connected to the emitter layer; a first passivation layer positioned on the emitter layer; a silicon oxide layer formed at an interface between the first passivation layer and the emitter layer, the silicon oxide layer having a thickness of about 1 nm to 3 nm; a first anti-reflection layer positioned on the first passivation layer; a plurality of back surface field layers locally positioned on a second surface of the substrate; a plurality of second electrodes respectively positioned on the plurality of back surface field layers and electrically connected to the plurality of back surface field layers; and a second passivation layer positioned on the second surface of the substrate.

Solar cell including: a semiconductor substrate of a first conductivity type having a region of the first conductivity type and region of a second conductivity type on the back side; a first finger electrode composed of a first contact portion and first current collector, a second finger electrode composed of a second contact portion and second current collector, a first bus bar electrode, a second bus bar electrode on the backside; an insulator film disposed at least in the area just under the first bus bar electrode and second bus bar electrode; wherein the electrical contact between the first current collector and first bus bar electrode as well as electrical contact between the second current collector and the second bus bar electrode are made on the insulator film; and first contact portion and the second contact portion are in a continuous line shape at least just under the insulator film.

A solar cell includes a front side for light incidence, an opposite back side, a crystalline semiconductor substrate of a first or second conductivity type, a front side passivating region with a passivating layer and a conductive layer of the first type, a back side passivating region with a passivating layer and a conductive layer of the second type, a front side contact with one front side conductive material and front side electrical contacts on the front side conductive material, a front side light coupling layer on the front side, a back side contact opposite the front side contact and formed by back side conductive material and a back side electrical contact thereon. The front side has lower light absorption and better antireflective property. The front side conductive material is thinner in regions between and/or besides front side electrical contacts than in regions below front side electrical contacts.

Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.

An arrangement for a thin-film photovoltaic cell stack comprises a substrate layer for a photovoltaic cell and a molybdenum grid positioned on the substrate layer, an ultra-thin alloy layer made of copper, indium, gallium and selenium positioned on the molybdenum grid, and a buffer layer positioned on the ultra-thin alloy layer made of copper, indium, gallium and selenium and a window layer positioned on the buffer layer.

A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.

A method for manufacturing a solar cell, the method comprising providing a substrate, arranging a passivation region on a surface of the substrate and arranging a collector layer on a surface of the passivation region, the step of arranging the passivation region comprises; depositing a first passivation layer on the surface of the substrate using a first gas; and, depositing a second passivation layer onto the surface of the first passivation layer using a second gas; wherein the first and second gases each comprise hydrogen gas and a silicon-based gas, wherein the ratio of hydrogen gas to silicon-based gas of the second gas is up to 2.5, and at least 0.4, times the ratio of hydrogen gas to silicon-based gas of the first gas.