Described herein are semiconductor packages with improved heat dissipation performance from a semiconductor chip to a semiconductor substrate despite the lack of uniformity of heat generation in the semiconductor chip. The semiconductor packages described herein may be used with image sensor chips, which produce heat in a non-uniform fashion across its surface. A semiconductor package includes a semiconductor substrate having a first substrate surface defining one or more recesses, an image sensor chip arranged on the first substrate surface of the semiconductor substrate, the image sensor chip including an image sensing area and a non-sensing area, a cover glass facing an upper portion of the image sensor 10 chip, a bonding dam surrounding the image sensing area and positioned between the image sensor chip and the cover glass, and one or more heat dissipation members arranged in the one or more recesses.

Described herein are semiconductor packages with improved heat dissipation performance from a semiconductor chip to a semiconductor substrate despite the lack of uniformity of heat generation in the semiconductor chip. The semiconductor packages described herein may be used with image sensor chips, which produce heat in a non-uniform fashion across its surface. A semiconductor package includes a semiconductor substrate having a first substrate surface defining one or more recesses, an image sensor chip arranged on the first substrate surface of the semiconductor substrate, the image sensor chip including an image sensing area and a non-sensing area, a cover glass facing an upper portion of the image sensor 10 chip, a bonding dam surrounding the image sensing area and positioned between the image sensor chip and the cover glass, and one or more heat dissipation members arranged in the one or more recesses.

A pixel includes a photosensitive element having a surface intended to receive light and a filter above the surface of the photosensitive element. The filter includes patterns made of a phase-change material and heating elements defined in an electrically-conductive layer of the filter. A temperature of the heating elements determines a temperature of the phase-change material. A control circuit for the pixel controls a temperature of the heating elements to modify a state of the phase-change material and a transmission rate of the filter depends on the state of the phase-change material.

A pixel includes a photosensitive element having a surface intended to receive light and a filter above the surface of the photosensitive element. The filter includes patterns made of a phase-change material and heating elements defined in an electrically-conductive layer of the filter. A temperature of the heating elements determines a temperature of the phase-change material. A control circuit for the pixel controls a temperature of the heating elements to modify a state of the phase-change material and a transmission rate of the filter depends on the state of the phase-change material.

A light detection device includes a Fabry-Perot interference filter provided with a light transmitting region on a predetermined line, a light detector disposed on one side with respect to the Fabry-Perot interference filter on the line, a package having an opening positioned on the other side with respect to the Fabry-Perot interference filter on the line, a light transmitting member provided in the package such that the opening is blocked, and a temperature control element having an endothermic region thermally connected to the Fabry-Perot interference filter and the light detector. The endothermic region is positioned on one side with respect to the light detector on the line.

A method for concentrated photovoltaic-thermal power generation includes converting a first portion of concentrated sunlight into electrical power when the first portion of concentrated sunlight illuminates an array of photovoltaic cells; and thermally coupling heat generated by the photovoltaic cells into a heat transfer plate. The method also includes cooling the heat transfer plate by flowing heat transfer fluid through an internal path of a cooling block in direct thermal contact with the heat transfer plate; and flowing the heat transfer fluid through a helical tube to absorb thermal energy from a second portion of concentrated sunlight illuminating the helical tube.

Solar cell structures comprising a plurality of solar cells, wherein each solar cell is separated from adjacent solar cell via a tunnel junction and/or a resonant tunneling structure (RTS), are described. Solar cells are implemented on Ge, Si, GaN, sapphire, and glass substrates. Each of the plurality of solar cells is at least partially constructed from a cell material which harnesses photons having energies in a predetermined energy range. In one embodiment each solar cell comprises of at least two sub-cells. It also describes a nano-patterned region/layer to implement high efficiency tandem/multi-junction solar cells that reduces dislocation density due to mismatch in lattice constants in the case of single crystalline and/or polycrystalline solar cells. Finally, solar structure could be used as light-emitting diodes when biased in forward biasing mode. The mode of operation could be determined by a programmed microprocessor.

Solar cell structures comprising a plurality of solar cells, wherein each solar cell is separated from adjacent solar cell via a tunnel junction and/or a resonant tunneling structure (RTS), are described. Solar cells are implemented on Ge, Si, GaN, sapphire, and glass substrates. Each of the plurality of solar cells is at least partially constructed from a cell material which harnesses photons having energies in a predetermined energy range. In one embodiment each solar cell comprises of at least two sub-cells. It also describes a nano-patterned region/layer to implement high efficiency tandem/multi-junction solar cells that reduces dislocation density due to mismatch in lattice constants in the case of single crystalline and/or polycrystalline solar cells. Finally, solar structure could be used as light-emitting diodes when biased in forward biasing mode. The mode of operation could be determined by a programmed microprocessor.

A photodetection element that concentrates irradiated light into a narrow area to suppress loss of light energy and perform efficient photodetection. The photodetection element includes a lens, a magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and a high refractive index layer disposed between the lens and the magnetic element and having a refractive index larger than that of the lens, wherein light that passes through the lens and the high refractive index layer is irradiated onto the magnetic element.

A photodetection element that concentrates irradiated light into a narrow area to suppress loss of light energy and perform efficient photodetection. The photodetection element includes a lens, a magnetic element including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and a high refractive index layer disposed between the lens and the magnetic element and having a refractive index larger than that of the lens, wherein light that passes through the lens and the high refractive index layer is irradiated onto the magnetic element.