A device and method of making an amorphous-silicon/inorganic thin film tandem solar cell including the steps of depositing a textured oxide buffer layer on an amorphous substrate, depositing a crystalline inorganic semiconductor film from a eutectic alloy on the buffer layer, and depositing an amorphous film on the crystalline inorganic film, the amorphous film forming a p-n junction with the crystalline inorganic semiconductor for a solar cell device.

A photovoltaic device includes a substrate, a first electrode formed on the substrate and a p-type absorber layer including a chalcogenide compound. An n-type layer includes a zinc oxysulfide material having a sulfur content adjusted to match a feature of the absorber layer. A transparent contact is formed on the n-type layer.

A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

This application provides a solar cell, a production method therefor, and a photovoltaic assembly. In one aspect, a solar cell includes a silicon substrate and a majority carrier tunneling field effect layer and a front selective contact layer stacked in sequence on a light receiving side of the silicon substrate. The front selective contact layer and the silicon substrate are of a same doping type. The majority carrier tunneling field effect layer includes a dielectric material with a dielectric constant greater than or equal to 8. A density of fixed charges in the majority carrier tunneling field effect layer is greater than or equal to a preset density. A type of the fixed charges in the majority carrier tunneling field effect layer is the same as a charge type of minority carriers in the silicon substrate.

This application provides a solar cell, a production method therefor, and a photovoltaic assembly. In one aspect, a solar cell includes a silicon substrate and a majority carrier tunneling field effect layer and a front selective contact layer stacked in sequence on a light receiving side of the silicon substrate. The front selective contact layer and the silicon substrate are of a same doping type. The majority carrier tunneling field effect layer includes a dielectric material with a dielectric constant greater than or equal to 8. A density of fixed charges in the majority carrier tunneling field effect layer is greater than or equal to a preset density. A type of the fixed charges in the majority carrier tunneling field effect layer is the same as a charge type of minority carriers in the silicon substrate.

A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80a12.20, 0.005b10.05, 0c10.20, and 0.60d11.00.

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

A semiconductor module comprises a string made up of a plurality of cells or strips arranged in series. A front surface of at least one cell or strip, has a polarity opposite to that of the front surface of another cell or strip in the string. In some embodiments the strips may comprise photovoltaic devices of different structures, for example Heterojunction (HJT) and Tunnel Oxide Passivated Contact (TOPCon). According to certain embodiments, one or more cells or strips of the string may be arranged in an overlapping shingled configuration, such that a front surface of the overlapped strip exhibits the appropriate polarity. For particular embodiments, one or more cells or strips may be adjacent in the string, such that a cell or strip has a front or back surface of polarity appropriate to connect with the adjacent cell or strip (e.g., using a ribbon located on a same surface).