Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Disclosed herein are avalanche photodiodes (APDs) particularly useful for high-sensitivity Geiger-mode APDs formed using an array of micro-cells. The photodetector is formed on a semiconductor substrate of indium phosphide (InP) having epitaxial layers, including indium gallium arsenide (InGaAs) as the photodetecting layer, with n-doped InP to one side, and layers of InP incorporating p-doped regions on the opposite side. The p-doped regions may serve to define an array of micro-cells, which may be arranged in a hexagonal pattern. A well may be etched through the epitaxial structures, allowing an electrode that contacts the n-doped InP layer and another that contacts the p-doped InP regions to be patterned on the same side of the detector. Flip-chip bonding techniques can then attach the semiconductor wafer to a stronger support substrate, which may additionally be configured with electronic circuitry positioned to electrically contact the electrodes on the semiconductor wafer surface.

An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.

An optical filtering structure comprising a stack of layers forming a first filter letting pass a first spectral band, and a second filter adjacent to the first filter and which lets pass a second spectral band comprising: a plurality of dielectric layers common to the two filters and of different refractive indices, n first metal layers common to the two filters, m second metal layers arranged only in the second filter, and wherein at least one of said dielectric layers comprises, in the first filter, a thickness different to that in the second filter, and/or wherein at least one dielectric layer is arranged only in the second filter, n being an integer greater than or equal to 0, and m being an integer greater than or equal to 1.

A light receiver capable of detecting the intensity of light in a certain wavelength range is provided. The light receiver includes a first light receiving element (PD1) and a second light receiving element (PD2) that have an identical spectral sensitivity characteristic, and a UV cut filter (11). Light that has passed through the UV cut filter (11) enters the first light receiving element (PD1). A subtractor is provided that calculates a difference between a photocurrent of the first light receiving element (PD1) and a photocurrent of the second light receiving element (PD2).

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

A sensor includes an InGaAs photodetector configured to convert received infrared radiation into electrical signals. A notch filter is operatively connected to the InGaAs photodetector to block detection of wavelengths within at least one predetermined band. An imaging camera system includes an InGaAs photodetector configured to convert received infrared radiation into electrical signals, the InGaAs photodetector including an array of photodetector pixels each configured to convert infrared radiation into electrical signals for imaging. At least one optical element is optically coupled to the InGaAs photodetector to focus an image on the array. A notch filter is operatively connected to the InGaAs photodetector to block detection of wavelengths within at least one predetermined band. A ROIC is operatively connected to the array to condition electrical signals from the array for imaging.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Ambient light sensing and proximity sensing is accomplished using pairs of stacked photodiodes. Each pair includes a shallow diode with a shallow junction depth that is more sensitive to light having a shorter wavelength and a deeper diode with a deeper junction depth more sensitive to light with longer wavelengths. Photodiodes receiving light passed through cyan, yellow, and magenta filters and light passed without a color filter are used to generate red, green, and blue information through a subtractive approach. The shallow diodes are used to generate lux values for ambient light and the deeper diodes are used for proximity sensing. One or more of the deep diodes may be used in correction to lux determinations of ambient light.