A timing of the readout from an imaging circuit is controlled from the outside of the imaging circuit. An exposure control signal receiving section is configured to receive, from outside, an exposure control signal that controls a timing at which plural pixels are exposed. A control signal receiving section is configured to receive, from the outside, a readout control signal that controls a timing at which the plural pixels are read out. A vertical driving control signal generating section is configured to generate, on the basis of the exposure control signal and the readout control signal, a vertical driving control signal that generates a control signal for exposure and readout with respect to each of pixel columns of a pixel section. A vertical driving circuit is configured to drive and control each of the pixel columns according to the vertical driving control signal.

An imaging device includes a plurality of pixels that receives incident light entering from an object after passing through neither an imaging lens nor a pinhole, and each outputs a detection signal indicating an output pixel value modulated in accordance with an incident angle of the incident light. The imaging device is attached to a vehicle so that a light receiving surface faces a side of the vehicle, and the average of the centroids of incident angle directivities indicating directivities of the plurality of pixels with respect to the incident angle of the incident light deviates in one direction from the center of the pixel. The present technology can be applied to an electronic sideview mirror, for example.

An image sensor includes a pixel defining pattern in a mesh form. A first division pattern divides a pixel area into two halves. A second division pattern divides the pixel area into two halves. A first diagonal division pattern divides the pixel area into two halves. A second diagonal division pattern divides the pixel area into two halves. First through eighth photodiodes are arranged in the pixel area.

Provided is a depth sensor which includes a pixel and a row driver that controls the pixel, the pixel including a first tap, a second tap, a third tap, and a fourth tap, an overflow transistor, and a photoelectric conversion device. Each of the first tap, the second tap, the third tap, and the fourth tap includes a photo transistor, a transfer transistor, and a readout circuit. In a first integration period of a global mode, the row driver activates a second photo gate signal controlling the photo transistor of the second tap and a third photo gate signal controlling the photo transistor of the third tap. In a second integration period of the global mode, the row driver activates a first photo gate signal controlling the photo transistor of the first tap and a fourth photo gate signal controlling the photo transistor of the fourth tap.

An image sensor includes a first layer including a pixel array region having a plurality of pixels arranged in a plurality of row lines and a plurality of column lines; and a second layer including a row driver selecting at least a portion of the plurality of row lines, generating pixel control signals driving selected row lines, and outputting the pixel control signals to control signal lines, wherein the selected row lines share the control signal lines, at a branch point of the first layer, the selected row lines receive the pixel control signals from the control signal lines in common, and the pixel control signals simultaneously drive the selected row lines.

An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

An image sensor including a pixel that includes: a first photoelectric conversion unit and a second photoelectric conversion unit, each of which generates an electric charge through photoelectric conversion of light; an output unit that outputs a first signal generated based upon the electric charge generated in the first photoelectric conversion unit and a second signal generated based upon an electric charge generated in the second photoelectric conversion unit; and an adjustment unit that adjusts a capacitance at the output unit upon outputting of the first signal and the second signal from the output unit.

In an imaging device, a differential stage includes an input transistor having an input node connected to a floating diffusion portion, a first control line and a second control line are located in a plurality of sets, the first control line is connected to connection portions of some sets of the plurality of sets, and the second control line is connected to connection portions of the other sets of the plurality of sets.

Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

An image sensing device is disclosed. The image sensing device includes a semiconductor substrate, a plurality of signal detectors, an insulation layer, and at least one gate. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and generates signal carriers in response to light incident upon the first surface. The signal detectors are formed on the semiconductor substrate and located closer to the second surface than the first surface of the semiconductor substrate, and detect the signal carriers using a difference in electric potential. The insulation layer is disposed at the second surface of the semiconductor substrate, and isolates the signal detectors from each other. The at least one gate is disposed at the insulation layer interposed between the signal detectors, and reflects light arriving at the second surface of the semiconductor substrate back to the semiconductor substrate.