H04N5/374

Solid state image sensor, method of manufacturing the same, and electronic device
09842874 · 2017-12-12 · ·

A solid-state imaging device includes a phase detection photodiode, a light shielding film, and a light absorption film. The phase detection photodiode has a light receiving surface. The light shielding film covers a part of the light receiving surface of the phase detection photodiode. The light absorption film is disposed over the phase detection photodiode and over the light shielding film.

Methods of calibrating linear-logarithmic image sensors

Methods of calibrating a linear-logarithmic image sensor pixel include performing a reset of the pixel in advance of establishing a leakage current between a photodiode and a floating diffusion region of the pixel. A first voltage of the floating diffusion region is then read through a source follower and selection transistor, after the leakage is terminated. A step is then performed to transfer charge between the photodiode and the floating diffusion region of the pixel so that a voltage of a cathode of the photodiode is increased. Thereafter, a second voltage of the floating diffusion region is read. The first and second read voltages are then used to perform a calibration operation. These steps may be repeated to establish another leakage current of different duration/magnitude and yield third and fourth read voltages, which support further calibration.

Imaging apparatus
09843721 · 2017-12-12 · ·

An imaging apparatus includes: an image comparing unit that compares a shot image shot by a photographer with a sample image selected by the photographer; an operation comparing unit that compares an operation performed when the shot image was shot with an operation performed when the sample image was shot; and an advising unit that gives the photographer advice on an image shooting method to make the shot image close to the sample image according to comparison results provided by the image comparing unit and the operation comparing unit.

Imaging devices, arrays of pixels receiving photocharges in bulk of select transistor, and methods

In some embodiments, an imaging device includes a pixel array. At least one of the pixels includes a photodiode that can generate charges, and a select transistor that receives the charges in its bulk. When the select transistor is selected, a pixel current through it may depend on a number of the received charges, thus evidencing how much light it detected. A reset transistor may reset the voltage of the bulk.

Optical electronic device including enhanced global shutter pixel array and related methods

An optical electronic device may include a plurality of different optical sources, and a global shutter sensor including an array of global shutter pixels, with each global shutter pixel including a plurality of storage elements. A controller may be coupled to the plurality of optical sources and the global shutter sensor and configured to cause a first optical source to illuminate and a first storage element in each global shutter pixel to store optical data during a first integration period, cause a second optical source to illuminate and a second storage element in each global shutter pixel to store optical data during a second integration period, and output the stored optical data from the first and second storage elements of the global shutter pixels after the first and second integration periods.

SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING THE SAME, AND ELECTRONIC APPARATUS
20170353683 · 2017-12-07 ·

The present technology relates to a solid-state imaging device, a method of driving the solid-state imaging device, and an electronic apparatus by which pixels can be read effectively. The solid-state imaging device includes a readout unit that performs a common-source operation or a source follower operation with respect to pixels to read a signal for each column. According to a level of illumination, the readout unit performs a common-source readout operation to reset a floating diffusion region and read an electric charge transferred from a photoelectric transducer and held in the floating diffusion region, and performs a source follower readout operation to reset the floating diffusion region and read the electric charge transferred from the photoelectric transducer and held in the floating diffusion region. The present technology is applicable to a solid-state imaging device such as a CMOS image sensor.

IMAGE PROCESSING APPARATUS, IMAGE CAPTURING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM
20170353680 · 2017-12-07 ·

An image processing apparatus comprises: an acquisition unit configured to acquire a first viewpoint image corresponding to a first partial pupil region of an exit pupil of as imaging optical system divided into a plurality of partial pupil regions in a first direction, and a captured image corresponding to the exit pupil; and a correction unit configured to correct shading of a first pixel of a first pixel group based on a first ratio of a sum of the first pixel group of the first viewpoint image arranged in a second direction orthogonal to the first direction to a sum of a pixel group of the captured image corresponding to a position of the first pixel group.

Methods and apparatus for ambient light suppression with subtractive image sensor
11516415 · 2022-11-29 · ·

The effect of ambient light on a measurement taken by an imaging pixel may be reduced by employing two optical filters. The two filters may have narrow passbands that are close to each other but do not overlap. The first filter may allow ambient and active light to pass. The second filter may allow ambient light to pass but may block active light. The ambient and active light that passes through the first filter may cause electrical charge to be generated in a photodiode of the pixel. The ambient light that passes through the second filter and strikes another pixel element may control the amperage of an electrical current that depletes charge from the photodiode. For instance, the other element may be a photoresistor, the light-dependent resistance of which controls the amperage, or may be a second photodiode that generates charge that controls a transistor that controls the amperage.

INFRARED CUT-OFF FILTER
20170351016 · 2017-12-07 ·

According to an embodiment a device comprises: an image sensor, an optical system comprising at least one lens, and an infrared, IR cut-off filter, transmission characteristics of the IR cut-off filter comprising a ripple with low transmission between wavelengths corresponding to blue and green.

Image sensor

An image sensor compensates for noise. The image sensor includes a pixel array that includes a common monitor output line, a first monitoring pixel outputting a first monitoring signal, a second monitoring pixel outputting a second monitoring signal, and an active pixel configured to output a sensing signal based on an incident light. The image circuit also includes a binning circuit that receives the first and second monitoring signals through the common monitor output line and generates an average monitoring signal by performing binning on the first and second monitoring signals, and an analog-to-digital converter that detects an alternating current (AC) component of the average monitoring signal and couples the sampled AC component of the average monitoring signal to the sensing signal, thereby compensating for noise.