A photodetector includes a plurality of photoelectric conversion elements arranged within a photosensitive-element area constituting one photosensitive element; the plurality of detection circuits each of which is provided for one of the plurality of photoelectric conversion elements, each of the detection circuits including a capacitor; and a signal processing section for totaling output signals produced by the plurality of detection circuits.

The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved.—The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.

An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

The present invention relates to stable and bioavailable immediate release formulations comprising dopamine receptor ligands. Methods of treating various disorders by administering the formulations are also described.

An analog-to-digital converter circuit includes: a first operation amplifier suitable for comparing a ramp voltage and a voltage to be converted so as to produce an amplification result and outputting the amplification result; a second operation amplifier suitable for comparing the amplification result transferred to a first input terminal with a reference voltage transferred to a second input terminal so as to produce a comparison result and outputting the comparison result; a leakage current measurer suitable for measuring a leakage current to the first input terminal; and a leakage current generator suitable for causing a current of the same amount as that of the leakage current measured by the leakage current measurer to flow to the second input terminal.

An imaging system includes a first illuminator that irradiates a subject with light whose intensity varies over time; and a first imaging device that includes a first imaging cell having a variable sensitivity, and a first sensitivity control line electrically connected to the first imaging cell. The first imaging cell includes a photoelectron conversion area that receives light from the subject to generate a signal charge, and a signal detection circuit that detects the signal charge. During an exposure period, the first sensitivity control line supplies to the first imaging cell a first sensitivity control signal having a waveform expressed by a first function that takes only positive values by adding a first constant to one basis from among bases of a system of functions constituting an orthogonal system

An optical sensor device, which may be a time-of-flight sensor, comprises a pixel array having a plurality of pixels. Moreover, the optical sensor device comprises a read-out node configured to provide photo-generated charge carriers from a first pixel and a second pixel for read-out and a first transfer gate configured to enable a read-out of the first pixel using the read-out node and a second transfer gate to disable a read-out of the second pixel during read-out of the first pixel.

A vehicular forward viewing image capture system includes an accessory module configured for attachment at an in-cabin side of a windshield of a vehicle, whereby a CMOS image sensor views through the windshield forward of the vehicle. With the accessory module attached at the in-cabin side of the windshield, and while the vehicle is traveling along a road, captured image data is processed to determine movement of an object of interest viewed by the image sensor. Multiple frames of captured image data are processed in determining movement of the object of interest. The accessory module includes an electrical connector for electrically connecting to a vehicle wiring system of the vehicle. Image data captured by the image sensor may be processed for an automatic headlamp control system of the equipped vehicle. The vehicular forward viewing image capture system may compensate for misalignment of the image sensor.

Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate.