A solid-state imaging device includes: a pixel array section in which a plurality of pixels including an amplification transistor configured to amplify a signal based on a photoelectric charge in accordance with an amount of received light are disposed; through vertical signal lines of the pixel array section, a bias-current control section configured to turn on or off a bias current supplied to the amplification transistor for each of the vertical signal lines; and a drive control section configured to control the bias-current control section so as to turn on the bias current of the vertical signal line through which a pixel signal is read, and to turn off the bias current of the vertical signal line through which a pixel signal is not read.

A solid-state imaging device includes a plurality of first photoelectric conversion elements, a plurality of second photoelectric conversion elements different from the plurality of first photoelectric conversion elements, a plurality of storage units, and a control unit. The plurality of storage units store signal charges output only from the plurality of first photoelectric conversion elements. The control unit controls operations of a first mode of outputting first signals based on signal charges output only from the plurality of first photoelectric conversion elements and stored in the plurality of storage units and a second mode of outputting second signals based on signal charges output from the plurality of first photoelectric conversion elements and the plurality of second photoelectric conversion elements without passing through the plurality of storage units.

An embodiment provides an imaging device including a pixel that includes a first photoelectric conversion portion, a second photoelectric conversion portion, a first transfer transistor, a second transfer transistor, and a floating diffusion portion. The first transfer transistor transfers a signal charge in the first photoelectric conversion portion to the floating diffusion portion. The second transfer transistor transfers a signal charge in the second photoelectric conversion portion to the floating diffusion portion. A potential at the first photoelectric conversion portion for the signal charge is higher than a potential at the second photoelectric conversion portion for the signal charge.

A solid-state imaging element according to the present disclosure includes: a first semiconductor substrate that includes a floating diffusion that temporarily holds an electric signal output from a photoelectric conversion element; and a second semiconductor substrate that faces the first semiconductor substrate, in which the second semiconductor substrate includes a first transistor disposed on a side facing the first semiconductor substrate, the first transistor including: a channel extending along a thickness direction of the second semiconductor substrate; and a multi-gate extending along the thickness direction of the second semiconductor substrate and sandwiching the channel, and the multi-gate of the first transistor is connected to the floating diffusion.

An imaging device that reliably images an object flashing at a period closely analogous to an output period of a moving image within a certain period is provided. A first common frame image, which is synthesized from pixel signals produced by photoelectric conversion elements arranged in row selection lines from a second start row selection line to an end row selection line, is extracted from a first frame image synthesized by an image sensor starting at a first start row selection line. As a moving image, a sequence of the first common frame images and second frame images synthesized by the image sensor starting at the second start row selection line is produced. Due to the phase difference between an imaging period of the first common frame image and an imaging period of the second frame image, a flashing object is captured in any of the frame images.

The capacitance value of the input node is set to a first capacitance value when a first potential is supplied to the switch. The capacitance value of the input node is set to a second capacitance value which is smaller than the first capacitance value when a second potential is supplied to the switch. The potential supplied to the switch is kept at a third potential which is a potential between the first potential and the second potential in a part of at least one of a period until the potential is set to the first potential from the second potential and a period until the potential is set to the second potential from the first potential.

The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

Provided is a signal readout circuit including: a first capacitor that holds a first electric charge; a second capacitor that holds a second electric charge; an amplifier section including an amplifier having first and second input terminals and first and second output terminals, outputting a first potential input to the first input terminal to the first output terminal with a gain of 1 and outputting a second potential input to the second input terminal to the second output terminal with a gain of 1; and a switch circuit that switches on/off state of a connection of a terminal of the first or second capacitor with at least one of the first and second input terminals and the first and second output terminals of the amplifier, wherein a difference between the first electric charge and the second electric charge is an amount indicating a voltage value of a predetermined voltage signal.

To prevent an increase in memory capacities in a device for performing image combination.

A data generation unit executes long exposure processing and short exposure processing in sequence, the long exposure processing being performed to generate data including a plurality of pixel data items as long exposure data by performing exposure over a longer time period of two different exposure time periods, the short exposure processing being performed to generate data including a plurality of pixel data items as short exposure data by performing exposure over a shorter time period of the two different exposure time periods after the long exposure processing. A compression unit compresses the long exposure data to generate compression data. A memory holds the compression data over delay time corresponding to the shorter time period of the two exposure time periods. A decompression unit decompresses the held compression data to restore the long exposure data. A combination unit combines the restored long exposure data and the short exposure data.

The present technology relates to a solid-state imaging device, a signal processing method, and an electronic device capable of appropriately adding signals of a plurality of pixels. —The solid-state imaging device is provided with a pixel array unit in which pixel units which output electric signals obtained by photoelectric conversion are arranged at least in a horizontal direction and a shared VSL being a vertical signal line (VSL) shared by a plurality of pixel units adjacent to each other in the horizontal direction, and the electric signals output from the plurality of pixel units which shares the shared VSL are added on the shared VSL. The present technology may be applied to an image sensors and the like which takes an image, for example.