An imaging device according to an embodiment of the present disclosure includes a pixel array including a plurality of pixels, a scanning control section that controls scanning of the plurality of pixels, and a readout control section that controls reading of the plurality of pixels. The imaging device further includes a first waveform generation part that generates a plurality of control signals for controlling of at least one of the scanning control section or the readout control section, a second waveform generation part that generates a plurality of reference signals, and a failure detection section that detects a failure of the first waveform generation part or the second waveform generation part on a basis of comparison between the plurality of control signals and the plurality of reference signals.

The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

An image pickup apparatus capable of determining a light amount change characteristic at the time of photographing with high accuracy. A light amount change period of light from a photometric target is determined, based first and second evaluation values calculated, respectively, based on a predetermined photometric value, and each of photometric values at first and second intervals causing the photometric values to be in the same phase relationship and the opposite phase relationship with the predetermined photometric value, respectively, in a case where the light from the photometric target changes at a predetermined frequency. It is determined whether or not the light from the photometric target changes at a light amount change period corresponding to the predetermined frequency.

A reduced area imaging device is provided for use in medical or dental instruments such as an endoscope. The imaging device is provided in various configurations, and connections between the imaging device elements and a video display may be achieved by wired or wireless connections. A connector assembly located near the imaging device interconnects the imaging device to an image/power cable extending through the endoscope. The connector provides strain relief and stabilization for electrically interconnecting the imager to the cable. The connector also serves as the structure for anchoring the distal ends of steering wires extending through the body of the endoscopic device. The connector includes a strain relief member mounted over a body of the connector. The connector allows a steering wire capability without enlarging the profile of the distal tip of the endoscopic device.

An imaging device includes an imaging unit, a reference signal generation unit, m (m is an integer of 3 or more) number of column delay units, and a plurality of column AD conversion units. The plurality of column delay units is arranged so as to correspond to two or more and less than m of the column AD conversion units. Each of the plurality of column delay units includes a first delay circuit. The first delay circuit generates a plurality of first delay clocks. The column AD conversion unit includes a comparison unit, a latch unit, and a counter unit. The comparison unit compares a pixel signal with a reference signal, and outputs a control signal corresponding to a comparison result. The latch unit includes a plurality of latch circuits that latches the plurality of first delay clocks on the basis of a state change of the control signal.

Various technologies described herein pertain to combining high dynamic range techniques to enable rendering higher dynamic range scenes with an image sensor. The image sensor can implement a combination of spatial exposure multiplexing and temporal exposure multiplexing, for example. By way of another example, the image sensor can implement a combination of spatial exposure multiplexing and dual gain operation. Pursuant to another example, the image sensor can implement a combination of temporal exposure multiplexing and dual gain operation. In accordance with yet another example, the image sensor can implement a combination of spatial exposure multiplexing, temporal exposure multiplexing, and dual gain operation. The image sensor can be formed on a single wafer or the image sensor can be a 3D-IC image sensor that includes at least two vertically integrated layers.

An image sensor including: a first control circuit; a plurality of pixels, each including a photodetector, a comparator of the level of an output signal of the photodetector with a reference value, and a second control circuit connected to the first control circuit, the second circuit being capable of sending a signal of address reading request to the first circuit when the pixel turns on, of receiving an address reading acknowledgement signal transmitted by the first circuit, and of deactivating the pixel on reception of the reading acknowledgement signal; and at least one third control circuit capable, when a pixel receives a reading acknowledgement signal, of blocking the transmission of address reading request signals in at least one adjacent pixel.

A solid-state imaging device that is capable of improving an imaging characteristic by enhancing a dynamic range of an ADC is provided. A solid-state imaging device that includes a pixel array including a plurality of pixels outputting a pixel signal by photoelectric conversion, and an AD conversion processing unit that performs AD conversion with respect to the pixel signal, and in which the AD conversion processing unit includes a comparator having a first amplifying unit that includes a pair of first differential pairs constituted of P-type transistors and a pair of second differential pairs constituted of N-type transistors, and a second amplifying unit that amplifies an output of the first amplifying unit, and in which a P-type transistor and an N-type transistor are connected in series is provided.

An example information processing apparatus including an infrared light emitter capable of emitting infrared light and a camera capable of at least taking an infrared light image is provided. In the information processing apparatus, when face detection has been successful with the infrared light emitted, emission of the infrared light is stopped, and a face detection process with the emission stopped is executed. As a result, when face detection has been successful, the face detection process is continued with emission of the infrared light stopped, and when face detection has been failure, the infrared light is emitted and the face detection process is continued.

An AD conversion circuit includes a comparator configured to compare an analog signal with a ramp signal and output a comparison result signal indicating a result of the comparison, and performs an AD conversion using the comparison result signal. In the comparison, a potential of the ramp signal changes with a lapse of time from a first potential to a second potential. Before the comparison, the potential of the ramp signal changes at a first change rate and then changes at a second change rate smaller than the first change rate, the potential of the ramp signal changes from the first potential to a third potential between the first potential and the second potential, and the comparator is reset in a state where the third potential is input to the comparator.