The present disclosure is directed to a snapshot multiframe imager having an aperture element having at least one aperture, an adjacently positioned random mask, an imaging element and a computer. The random mask has a plurality of micron scale apertures and receives light passing through the aperture element, which represents the spatial information from the scene being imaged, and generates a plurality of image frames encoded in a spatial domain. The imaging element may operate in a drift-scan mode receives the encoded image frames and generates a streaked pattern of electrons representing a plurality of images of the scene at a plurality of different times. The computer analyzes the streaked pattern of electrons and mathematically reconstructs the plurality of images.

When the amplification ratio is low and strong incident light causes a large charge, the signal retrieved from regions where the incident light is weak is also weak, but when the amplification ratio is high in regions where the incident light is weak, the signal retrieved from regions where the incident light is strong becomes saturated. Therefore, the dynamic range of the imaging unit is narrow. Provided is an imaging unit comprising an imaging section that includes a first group having one or more pixels and a second group having one or more pixels different from those of the first group; and a control section that, while a single charge accumulation is performed in the first group, causes pixel signals to be output by performing charge accumulation in the second group a number of times differing from a number of times charge accumulation is performed in the first group.

An array sensor and a method for forming and operating the same are provided. The array sensor includes: a sensor circuit including an array of pixel units that includes N rows of pixel units; and a driving circuit including at least N rows of shifting units; where the driving circuit further includes: a first global clearing signal line connected with odd rows of shifting units, a signal of which being applied to trigger the odd rows of shifting units to simultaneously turn on odd rows of pixel units, so that the odd rows of pixel units simultaneously discharge residual charge; and a second global clearing signal line connected with even rows of shifting units, a signal of which being applied to trigger the even rows of shifting units to simultaneously turn on even rows of pixel units, so that the even rows of pixel units simultaneously discharge residual charge.

An imaging optical system according to the present disclosure includes: a lens; and an optical member, in which the optical member is configured such that a light transmittance value at least in a peripheral portion is larger than a light transmittance value in a central portion. Furthermore, a camera module according to the present disclosure includes the imaging optical system of the present disclosure. Furthermore, an electronic device according to the present disclosure includes a solid-state imaging element and the imaging optical system of the present disclosure.

Examples of an apparatus are disclosed. In some example, an apparatus may include an array of digital pixel cells, each digital pixel cell including a photodiode and a memory device to store a digital output generated based on charge generated by the photodiode in an exposure period. The apparatus may also include an image processor configured to: receive first digital outputs from the memory devices of a first set of digital pixel cells of the array of digital pixel cells; determine, from the first set of digital pixel cells, a second set of digital pixel cells of which the first digital outputs satisfy one or more pre-determined conditions; identify, based on the second set of digital pixel cells, a third set of digital pixel cells; receive the second digital outputs generated by the third set of digital pixel cells; and perform image processing operations based on the second digital outputs.

An image sensing device includes a pixel array configured to include a first pixel group and a second pixel group that are contiguous to each other, each of the first pixel group and second pixel group including a plurality of imaging pixels to convert light into pixel signals, and a light field lens array disposed over the pixel array to direct light to the imaging pixels and configured as a moveable structure that is operable to move between a first position and a second position in a horizontal direction by a predetermined distance corresponding to a width of the first pixel group or a width of the second pixel group, the light field lens array configured to include one or more lens regions each including a light field lens and one or more open regions formed without the light field lens to enable both light filed imaging and conventional imaging.

A camera module includes: a plurality of lenses; an image sensing component disposed on an imaging side of the plurality of lenses, and an area of a photosensitive region of the image sensing component is greater than an area of actual imaging region of a single lens and less than the sum of the area of actual imaging region of each of the lenses; and a plurality of optical switch components, disposed, between the plurality of lenses and the image sensing component, corresponding to the plurality of lenses, wherein the optical switch component is controlled to switch between an on state and an off state, and neighboring optical switch components corresponding to neighboring lenses whose actual imaging regions overlap each other are not turned on at the same time.

An imaging device includes: a light source emitting light based on a first pulse; a solid-state imaging element including pixel units and exposing the light based on a second pulse; and a signal processor. Each pixel unit includes a photoelectric converter and charge accumulating units, and generates first to third signal charges by first to third exposure processes in this order to be accumulated in the charge accumulating units. Each of the first and third exposure processes is based on the second pulse delayed from the first pulse by a first period, and the second exposure process is based on the second pulse delayed from the first pulse by a second period. A total period of the first and third exposure processes is equal to that of the second exposure process. The signal processor calculates a distance signal for each pixel unit by using the first to third signal charges.

A polarization imaging section 20 includes polarized pixels in each of a plurality of polarization directions. The polarization imaging section 20 includes a polarizer. The polarization imaging section 20 outputs image signals of a polarized image to a defect detecting section 35 of an image processing section 30. In a case where a difference between a pixel value of a target polarized pixel generated by the polarization imaging section and a pixel value of the target polarized pixel estimated from polarization characteristics corresponding to pixel values of peripheral pixels in a polarization direction different from a polarization direction of the target polarized pixel is greater than a predetermined allowable range, the defect detecting section 35 determines that the target polarized pixel is a defective pixel. Therefore, it is possible to detect a defect of a pixel in the polarization imaging section that generates the polarized image.

A first region includes a plurality of first transfer column regions distributed in a first direction. A second region includes a plurality of second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction in the second transfer section. Lengths in a second direction of the plurality of first transfer column regions are equal. Lengths in the second direction of the plurality of second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region in the second direction increases in the charge transfer direction in response to a change in the lengths of the plurality of second transfer column regions.