An image sensor includes a plurality of pixels, where each of the plurality of pixels includes a photodiode. The image sensor is configured to capture images of a scene exposed with a flickering light source by for each of the plurality of pixels, acquiring a value representative of a light level at a corresponding pixel by gradually varying a value of sensitivity of the corresponding pixel.

Dynamic range enhancement methods and systems for display for use welding applications are described. A display system in a dynamic range enhancement system can include, for example, a splitter, a high density filter, a low density filter, a first image sensor, a second image sensor, a graphical circuit, and a display. The high density filter and the first image sensor can be disposed in a first path. The low density filter and the second image sensor can be disposed in a second path. The first image sensor can receive filtered electromagnetic waves from the high density filter. The second image sensor can receive filtered electromagnetic waves from the low density filter. The graphic circuit can combine the signals from the first image sensor and the second image sensor to provide a high dynamic range image or video that is displayed on the display of a welding helmet, for example.

A solid-state imaging apparatus includes: an overflow element group that accumulates a signal charge that overflows from a photodiode; and a floating diffusion layer that selectively holds a signal charge transferred from the photodiode and a signal charge transferred from the overflow element group. The overflow element group includes m groups (m≥2) connected in series in stages, each group including an overflow element and a storage capacitive element. An overflow element among the groups transfers, to the storage capacitive element included in the same group as the overflow element, a signal charge that overflows from the photodiode or a signal charge from an upstream storage capacitive element among the groups.

A method and device of driving a radiation sensor pixel is disclosed. The sensor pixel comprises a sensing element capable of charge generation as a response to impinging radiation, a floating diffusion node, a transfer gate between the sensing element and the floating diffusion node, and a charge storage device connected to the floating diffusion node via a switch. The method comprises biasing the transfer gate to three or more bias voltages OFF, ON and an intermediate bias between OFF and ON. During the period in which the transfer gate is biased to the intermediate bias, if the sensor reaches saturation, the overflown charges may be collected and part of them stored in the charge storage device, for further analysis and merging.

An image sensor which operates in a global shutter mode is provided. The image sensor includes a pixel array comprising a plurality of pixels arranged in a plurality of rows and columns, a timing generator configured to generate row driver control signals which controls an integration period of a pixel of the plurality of pixels to include at least two sub integration periods, and a row driver configured to generate a plurality of row control signals which controls each of the rows in the pixel array based on the row driver control signals, wherein the timing generator is further configured to control a single image frame to include the integration period and a readout period of the pixel, based on the row driver control signals.

The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.

An image sensor including: a plurality of pixels each including a photodiode coupled to first and second capacitive elements by first and second transistors; a control circuit provided to acquire, for each pixel, a first and second value V_S and V_M representative of illumination levels of the photodiode during the first second periods, the first period being divided into a plurality of first sub-periods and the second period being divided into a plurality of second sub-periods, the first and second sub-periods sub-periods being interlaced; and a sum circuit capable of calculating, for each pixel, a value V_MS=C_S*V_S+C_M*V_M, C_S et C_M being first and second coefficients such that values C_S*V_S and C_M*V_M are substantially equal when the illumination of the photodiode is continuous.

An image reading apparatus includes an image reading chip configured to read an image. The image reading chip includes a first pixel unit which generates a first pixel signal, a second pixel unit which generates a second pixel signal, a first amplification unit which amplifies the first pixel signal, and outputs a first amplification signal, a second amplification unit which amplifies the second pixel signal, and outputs a second amplification signal, and a third amplification unit that amplifies each of the first amplification signal and the second amplification signal, and outputs an amplified signal. The image reading chip has a shape which includes a first side and a second side shorter than the first side. The third amplification unit is disposed between the first amplification unit and the second amplification unit in a direction along the first side.

An image sensor is operated for shutter modulation and high dynamic range, suitable for use with a local lamp. In one example, charge is collected at a photodetector of a photodetector circuit for a first duration for a first mini-exposure. The photodetector charge is transferred to a charge collection node of the photodetector circuit. A portion of the transferred charge is spilled from the charge collection node. Charge is collected at the photodetector for a second duration for a second mini-exposure. The second mini-exposure photodetector charge is transferred to the charge collection node after spilling the portion. The collected charge is read after transferring the second mini-exposure photodetector charge and the spilled portion of the charge is estimated and the spilled portion is added to the collected charge reading to obtain a total charge value for the combined exposures.

Systems and methods for implementing array cameras configured to perform super-resolution processing to generate higher resolution super-resolved images using a plurality of captured images and lens stack arrays that can be utilized in array cameras are disclosed. An imaging device in accordance with one embodiment of the invention includes at least one imager array, and each imager in the array comprises a plurality of light sensing elements and a lens stack including at least one lens surface, where the lens stack is configured to form an image on the light sensing elements, control circuitry configured to capture images formed on the light sensing elements of each of the imagers, and a super-resolution processing module configured to generate at least one higher resolution super-resolved image using a plurality of the captured images.