Patent classifications
H04N5/369
Image capturing apparatus and control method thereof
An image capturing apparatus comprises an image sensor in which a plurality of pixels are arranged, wherein the plurality of pixels output focus detection signals based on light flux that has passed through an imaging optical system, a shifting unit that shifts an incident position of the light flux on the image sensor; and a focus detection unit that performs focus detection using the focus detection signals. The shifting unit shifts the incident position by a predetermined distance which is equal to or less than a distance between the pixels of the image sensor corresponding to the focus detection signals during a charge accumulation period in the image sensor for acquiring the focus detection signals.
Signal processing circuit, photoelectric conversion apparatus, and equipment
A signal processing circuit includes a reference signal line, a processing circuit that processes a potential of the reference signal line and a potential of an input signal, a first reference voltage supplying circuit that outputs a predetermined potential to one end of the reference signal line, and a second reference voltage supplying circuit that outputs a predetermined potential to the other end of the reference signal line.
Image sensor and manufacturing method thereof
An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.
Imaging element, imaging apparatus, operation method of imaging element, and program
An imaging element includes a reading circuit that reads out pixel data obtained by imaging a subject at a first frame rate, a memory that stores the read pixel data, and an output circuit that outputs image data based on the stored pixel data at a second frame rate. The first frame rate is a frame rate higher than the second frame rate. The pixel data includes phase difference pixel data and non-phase difference pixel data different from the phase difference pixel data. The reading circuit reads out the pixel data of each of a plurality of frames in parallel within an output period defined by the second frame rate as a period in which the image data of one frame is output, and performs reading of the non-phase difference pixel data and a plurality of reading of the phase difference pixel data within the output period.
Imaging element, stacked-type imaging element, and solid-state imaging apparatus
There is provided an imaging element including: a photoelectric conversion unit formed by stacking a first electrode 21, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode 24 that has an opposite region 24a opposite to the first electrode 21 via an insulating layer 82, and a transfer control electrode 25 that is opposite to the first electrode 21 and the charge storage electrode 24 via the insulating layer 82, and the photoelectric conversion layer is disposed above at least the charge storage electrode 24 via the insulating layer 82.
Solid-state imaging device
A mounting area in a solid-state imaging device that detects an address event. The solid-state imaging device includes a light receiving chip and a detection chip. In the solid-state imaging device including the light receiving chip and the detection chip, the light receiving chip includes a photodiode that photoelectrically converts incident light and generates a photocurrent. In addition, the solid-state imaging device, the detection chip quantizes a voltage signal corresponding to the photocurrent generated by the photodiode in the light receiving chip and outputs the voltage signal as a detection signal.
Solid-state imaging device, solid-state imaging method, and electronic equipment
There is provided a solid-state imaging device including an imaging unit (211) that captures a first captured image, a light emission controlling unit (271) that controls emission of light from the light emitting unit, a decision unit (2331) that decides whether or not the emission of light is detected from within the first captured image, and a transmission controlling unit (2333) that controls, when the emission of light is detected, transmission of a second captured image or data based on the second captured image.
IMAGING DEVICE
An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.
Active depth sensing image sensor
Aspects of the present disclosure relate to an image sensor. An example apparatus includes an image sensor including one or more pixels. Each pixel of the one or more pixels includes a photodetector, and the photodetector includes a photosensitive surface including germanium. In some implementations, the photodetector includes a photodiode including an intrinsic silicon layer doped with germanium or including germanium crystals. The intrinsic layer may be between a p− layer and an n− layer not including germanium. The intrinsic layer may be configured to absorb photons of the light received at the intrinsic layer. The light may include one or more reflections of an emitted light for active depth sensing. For example, the emitted light may be frequency modulated and having a first wavelength for indirect time-of-flight depth sensing. Sampling circuits may generate voltages indicating a phase difference between the emitted light and a reflection of the emitted light.
LIGHT RECEPTION DEVICE, METHOD OF CONTROLLING LIGHT RECEPTION DEVICE, AND DISTANCE MEASURING DEVICE
A light reception device of the present disclosure includes: a light-receiving section including pixels two-dimensionally arranged in a matrix, the pixels each including a light-receiving element; a row selector that selects the pixels of the light-receiving section in units of one pixel row or a plurality of pixel rows; a column selector that selects the pixels in one pixel row or a plurality of pixel rows selected by the row selector in pixel units; and a controller that controls the column selector. Then, the controller controls the column selector to select the pixels in the one pixel row or the plurality of pixel rows selected by the row selector in units of regions each including a plurality of pixels as a unit, and read out signals of the pixels for each of the regions. In addition, a distance measuring device of the present disclosure uses a light reception device having a configuration described above.