A light-emitting element includes: a cathode; an anode; a light-emitting layer provided between the cathode and the anode and containing quantum dots; an electron-transport layer provided between the light-emitting layer and the cathode; and a hole-transport layer provided between the light-emitting layer and the anode. The light-emitting layer includes a first light-emitting layer containing first quantum dots to which first ligands are coordinated, and further includes a second light-emitting layer provided closer to the electron-transport layer than to the first light-emitting layer, and containing second quantum dots to which second ligands are coordinated. A dipole moment of the first ligands is larger than a dipole moment of the second ligands.

A quantum dot includes crystalline nanoparticle, wherein the quantum dot has a multi-layer structure including core particle and a plurality of layers on the core particle, and has Zn, S, Se, and Te as constituent elements, and the quantum dot has at least one quantum well structure in a radial direction from the center of the quantum dot. Therefore, quantum dots, which are crystalline nanoparticles, which do not contain harmful substances such as Cd and Pb, have excellent light emission characteristics such as half-value width at half maximum, and have high quantum efficiency.

The present invention relates to a metal complex having a structure of chemical formula (I). The metal complex is applied to an organic light-emitting device which emits deep red or near-infrared light, and shows a lower driving voltage and higher luminous efficiency, and has greatly prolonged service life. Therefore, the metal complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

##STR00001##

The present disclosure relates to a display panel and a manufacturing method thereof, and a display device. The display panel includes a plurality of pixel units. The pixel unit includes a red sub-pixel, a green sub-pixel and a blue sub-pixel. The red sub-pixel, the green sub-pixel and the blue sub-pixel each include a cathode, an electron transport layer, a quantum dot luminescent layer, a hole function layer and an anode that are stacked. The electron transport layer is made of Mg-doped ZnO nanoparticles, and a Mg doping concentration in the electron transport layer of the red sub-pixel, a Mg doping concentration in the electron transport layer of the green sub-pixel and a Mg doping concentration in the electron transport layer of the blue sub-pixel decrease successively.

The present disclosure discloses an electroluminescent diode and a display device. The electroluminescent diode includes a cathode, a luminescent layer, a hole transport layer and an anode. The hole transport layer has a hole injection control structure, the hole injection control structure includes a first hole conduction layer and a second hole conduction layer that are stacked, and a material of the second hole conduction layer is a material used in the first hole conduction layer that is P-type doped. The hole injection control structure may significantly improve the performance of hole injection in the electroluminescent diode, so as to balance a number of carriers in the electroluminescent diode, thereby effectively improving the luminescence performance and prolonging the service life thereof.

A first electronic component (10) includes a terminal (142) and a substrate (100). The substrate (100) includes the terminal (142). At least a portion of a second electronic component (20) overlaps the terminal (142) of the first electronic component (10). A resin film (300) electrically connects the terminal (142) of the first electronic component (10) and the second electronic component (20). The resin film (300) includes a first portion (310) and a second portion (320). The first portion (310) of the resin film (300) overlaps the terminal (142) and the second electronic component (20) when viewed from a predetermined direction (D). The second portion (320) of the resin film (300) does not overlap the substrate (100) or the terminal (142), and overlaps the second electronic component (20) when viewed from the predetermined direction (D).

The present disclosure provides a blue organic electroluminescence device, a display panel, and a display apparatus. A blue organic electroluminescence device includes a light-emitting layer having a matrix material and a blue fluorescent doping material doped in the matrix material, where dipole moments of the matrix material and the blue fluorescent doping material are both 0 to 1 D, which can ensure higher energy transfer efficiency and charge balance, ensure that an emission spectrum is a narrow spectrum, and thus have better color purity and higher external quantum Efficiency (EQE) to obtain the blue organic electroluminescence devices with high color purity and high luminous efficiency.

An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λ.sub.max) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λ.sub.max) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1.sup.st λ.sub.max wavelength) that is less than an emission peak wavelength at the first voltage (λ.sub.max@first voltage) and an emission peak wavelength at the second voltage (λ.sub.max@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λmax) is less than or equal to about 4 nm.

A display device includes a display panel and a heat radiation sheet disposed under the display panel, where a first region and a second region disposed outside the first region when viewed in a thickness direction thereof are defined in the heat radiation sheet. The heat radiation sheet includes a heat radiation layer disposed in the first region, a lower protective layer disposed under the heat radiation layer, where a plurality of openings is defined in the lower protective layer, and an upper protective layer disposed above the heat radiation layer and coupled to the lower protective layer in the second region.

Use of transition metal complexes of the formula (I) in organic light-emitting diodes ##STR00001## where: M.sup.1 is a metal atom; carbene is a carbene ligand; L is a monoanionic or dianionic ligand; K is an uncharged monodentate or bidentate ligand selected from the group consisting of phosphines; CO; pyridines; nitriles and conjugated dienes which form a π complex with M.sup.1; n is the number of carbene ligands and is at least 1; m is the number of ligands L, where m can be 0 or ≥1; o is the number of ligands K, where o can be 0 or ≥1; where the sum n+m+o is dependent on the oxidation state and coordination number of the metal atom and on the denticity of the ligands carbene, L and K and also on the charge on the ligands carbene and L, with the proviso that n is at least 1, and also
an OLED comprising these transition metal complexes, a light-emitting layer comprising these transition metal complexes, OLEDs comprising this light-emitting layer, devices comprising an OLED according to the present invention, and specific transition metal complexes comprising atb least two carbene ligands.