Provided are an electroluminescent compound having a structure represented by Formula I, a thermally activated delayed fluorescence material and an application thereof. The electroluminescent compound has TADF characteristics and may be applied to a light emitting layer of an OLED device as a thermally activated delayed fluorescence material. The OLED device includes an anode, a cathode, and at least one organic thin film layer comprising the thermally activated delayed fluorescence material in a light emitting layer between the anode and the cathode. The electroluminescent compound effectively reduces the overlap between HOMO and LUMO through special molecular structure design, so that ΔE.sub.ST is reduced to less than 0.25 eV, which satisfies reverse crossing of energy from a triplet state to a singlet state, effectively improves transmission capacities of two kinds of carriers, improves carrier balance, and thus significantly improves light emitting efficiency of the OLED device.

The present application relates to the technical field of organic materials, and provides a nitrogen-containing compound, an electronic element and an electronic apparatus. The structure of the nitrogen-containing compound is shown as Chemical formula 1. The nitrogen-containing compound can improve the performance of the electronic element. Ar is II, and X is selected from O or S; L.sub.1 is III, and in L.sub.1, “#” represents a connection point between the phenylene of L.sub.1 and N, and “##” represents a connection point between the phenylene of L.sub.1 and IV; L.sub.2 is V, and in L.sub.2, “#” represents a connection point between the phenylene of L.sub.2 and N, and “##” represents a connection point between the phenylene of L.sub.2 and R.sub.4. ##STR00001##

The present disclosure provides an electroluminescent display apparatus including a substrate including a first subpixel, a second subpixel, and a third subpixel, a first electrode in each of the first subpixel, the second subpixel, and the third subpixel on the substrate, a bank provided in a boundary between any two of the first subpixel, the second subpixel, and the third subpixel to cover an edge of the first electrode, a protection layer on the first electrode and the bank, a light emitting layer on the protection layer, and a second electrode on the light emitting layer.

The present disclosure relates to an organic compound having a binaphthyl core and a group connected to the biphenyl core and having excellent charge mobility property, and a light emitting diode and a light emitting device having the organic compound. The organic compound can be applied into the light emitting diode by using solution process and has very deep HOMO energy level. When the organic compound is applied into a chare transfer layer, a HOMO energy level bandgap between the charge transfer layer and an emitting material layer is reduced so that holes and electrons can be injected into the emitting material layer in a balanced manner.

A display substrate and a manufacturing method thereof are provided. The display substrate includes a base substrate, as well as a first conductive layer, an organic functional layer and a second conductive layer which are on the base substrate sequentially, and the organic functional layer includes a carrier injection layer including a first carrier injection layer portion and a second carrier injection layer portion which are in a first sub-pixel area and a second sub-pixel area respectively; the display substrate further includes a spacer which separates the first carrier injection layer portion and the second carrier injection layer portion, and the carrier injection layer further includes a third carrier injection layer portion which is separated from the first carrier injection layer portion and the second carrier injection layer portion respectively.

Presented is an organic light-emitting device including a host, a dopant, and a sensitizer.

The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia:

##STR00001##

The present invention relates to a method for producing a light-emitting diode having polarized emission, comprising: applying a liquid, in which elongated semiconductor nanoparticles are dispersed, to a surface of a substrate containing at least two electrodes, and aligning the semiconductor nanoparticles applied on the substrate surface in an electric field generated by the electrodes. transferring the aligned semiconductor nanoparticles from the surface of the substrate to a surface of a semifinished product of the light-emitting diode.

Provided are an organometallic compound, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device, the organometallic compound having a charge capture ability (CCA) of about 4.0 to about 10.5 and including a transition metal and a ligand(s) in the number of n linked to the transition metal, wherein n is an integer from 1 to 6, and the ligand(s) in the number of n includes at least one ligand linked to the transition metal through carbon, nitrogen, or a combination thereof, and the ligand(s) in the number of n does not include a ligand linked to the transition metal through two oxygens.

The present disclosure relates to a quantum dot and a preparation method for the same, and a photoelectric device. The quantum dot includes a core and a shell layer coating the core, a material of the core is CdZnSe, and a material of the shell layer is CdZnS, wherein, a molar ratio of Cd element with respect to S element in the shell layer is from 0.15:1 to 0.4:1.