A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

A semiconductor device and a corresponding fabricating method are provided. The semiconductor device includes a substrate and an active area in the substrate. The semiconductor device further includes at least one isolation structure positioned between two adjacent transistors. Each isolation structure includes a conductive core, and a dielectric layer surrounding the conductive core and positioned between the conductive core and an adjacent transistor.