A semiconductor device that can be miniaturized or highly integrated is provided. An oxide semiconductor, a first conductor, a first insulator, a second insulator, an inorganic film, a first coating film, a second coating film, and a resist mask are formed in this order over a substrate. The second coating film is processed by a dry etching method, thereby forming an island-shaped second coating film. The first coating film is processed by a dry etching method using the island-shaped second coating film as a mask, thereby forming an island-shaped first coating film and removing the resist mask. The inorganic film, the second insulator, the first insulator, and the first conductor are processed in this order by a dry etching method using the island-shaped first coating film as a mask, thereby forming an island-shaped inorganic film, an island-shaped second insulator, an island-shaped first insulator, and an island-shaped first conductor and removing the island-shaped second coating film. The oxide semiconductor is processed by a dry etching method using the island-shaped inorganic film as a mask, thereby forming an island-shaped oxide semiconductor and removing the island-shaped first coating film. The island-shaped inorganic film is removed by a dry etching method. The first insulator is a nitride. The second insulator is an oxide.

A semiconductor device including a first conductive layer, a second conductive layer over the first conductive layer, a first insulating layer in contact with the first conductive layer and the second conductive layer, a third conductive layer over the first insulating layer, a semiconductor layer in contact with the third conductive layer, the first conductive layer, and the first insulating layer, a second insulating layer over the first insulating layer, the semiconductor layer, and the third conductive layer, and a fourth conductive layer over the second insulating layer is provided. A shortest distance from a top surface of the first conductive layer to a top surface of the second conductive layer is longer than a shortest distance from the top surface of the first conductive layer to a bottom surface of the fourth conductive layer.

The present disclosure relates to integrated circuits which include various structural elements designed to reduce the impact of strain on the electronic components of the circuit. In particular, a combination of trenches and cavities are used to mechanically isolate the integrated circuit from the surrounding substrate. The trenches may be formed such that they surround the integrated circuit, and the cavities may be formed under the integrated circuit. As such, the integrated circuit may be formed on a portion of the substrate that forms a platform. In order that the platform does not move, it may be tethered to the surrounding substrate. By including such mechanical elements, variation in the electrical characteristics of the integrated circuit are reduced.

A solid-state imaging device (200) includes a photoelectric conversion device (211), a current-voltage conversion circuit (310), and an output circuit. The photoelectric conversion device (211) performs photoelectric conversion of incident light. The current-voltage conversion circuit (310) includes a first transistor (311) that converts an amount of electric charge generated by photoelectric conversion into a voltage signal. The output circuit includes a second transistor having an S value smaller than an S value of the first transistor (311) and generates an output signal based on the voltage signal.

A method for making a semiconductor device may include forming a first single crystal silicon layer having a first percentage of silicon 28, and forming a superlattice above the first single crystal silicon layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions. The method may further include forming a second single crystal silicon layer above the superlattice having a second percentage of silicon 28 higher than the first percentage of silicon 28.

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a first oxide and a second oxide being electrically connected to the first conductor and having an opening, a second conductor electrically connected to the first oxide, a third conductor placed inside the opening that the first oxide has, a fourth conductor electrically connected to the third conductor, a fifth conductor electrically connected to the second oxide, a sixth conductor placed inside the opening that the second oxide has, a seventh conductor electrically connected to the sixth conductor, and an eighth conductor electrically connected to the second conductor and the seventh conductor. The fourth conductor is provided in the same layer as the seventh conductor, and a direction in which the fourth conductor extends is the same as a direction in which the fifth conductor extends.

A semiconductor device including a first conductive layer, a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a second conductive layer, a semiconductor layer, a third conductive layer, and a fifth insulating layer. The semiconductor layer is in contact with a top surface of the first conductive layer, a side surface of the first insulating layer, a side surface of the second insulating layer, a side surface of the third insulating layer, a side surface of the fourth insulating layer, and the second conductive layer. The third conductive layer is over the fifth insulating layer and overlaps with the semiconductor layer with the fifth insulating layer therebetween; the first insulating layer includes a region having a higher hydrogen content than each of the second insulating layer and the fourth insulating layer; and the third insulating layer includes oxygen.

An imaging device according to embodiments of the present disclosure includes: a first semiconductor substrate provided with a photoelectric conversion element, floating diffusion that temporarily holds a charge output from the photoelectric conversion element, and a transfer transistor that transfers the charge output from the photoelectric conversion element to the floating diffusion; and a second semiconductor substrate provided on the first semiconductor substrate via a first interlayer insulating film and provided with a readout circuit unit that reads out the charge held in the floating diffusion and outputs a pixel signal.

The present disclosure relates to integrated circuits which include various structural elements designed to reduce the impact of strain on the electronic components of the circuit. In particular, a combination of trenches and cavities are used to mechanically isolate the integrated circuit from the surrounding substrate. The trenches may be formed such that they surround the integrated circuit, and the cavities may be formed under the integrated circuit. As such, the integrated circuit may be formed on a portion of the substrate that forms a platform. In order that the platform does not move, it may be tethered to the surrounding substrate. By including such mechanical elements, variation in the electrical characteristics of the integrated circuit are reduced.

A high-resolution display device in which delay of input signals to pixels is reduced is provided. In the display device, a first layer, a second layer, and a third layer are formed in this order from the bottom. The first layer includes a driver circuit and a plurality of first wirings, the second layer includes a plurality of first contact portions, and the third layer includes a pixel array and a plurality of second wirings. The pixel array includes a plurality of pixel circuits. The plurality of second wirings are parallel to each other and extended in the column direction of the pixel array, and the plurality of pixel circuits are electrically connected to the plurality of second wirings. The driver circuit includes a plurality of output terminals positioned along a first direction. The plurality of first wirings are extended perpendicular to the first direction, and the plurality of output terminals are electrically connected to the plurality of first wirings. The plurality of first wirings are electrically connected to the plurality of second wirings through the plurality of first contact portions.