Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1:

##STR00001##

a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2:

##STR00002## wherein in Chemical Formulae 1 and 2 groups R.sup.2, R.sub.a to R.sub.d, Y.sub.a to Y.sub.d, L.sub.1 and L.sub.2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal being different from the second semiconductor nanocrystal.

A QD glass cell includes a glass cell and QD fluorescent powder material. The glass cell includes a receiving chamber, and the QD fluorescent powder being encapsulated within the receiving chamber. A manufacturing method of the QD glass cell includes: S101: manufacturing a glass cell comprising a receiving chamber, and the glass cell comprising an injection port transmitting fluid into the receiving chamber; S102: manufacturing fluid QD fluorescent powder material; S103: filling the fluid QD fluorescent powder material into the receiving chamber via the injection port; S104: applying a curing process to the fluid QD fluorescent powder material within the receiving chamber; and S105: sealing the injection port by hot melting to obtain the QD glass cell. In addition, the above QD glass cell may be applied to LED light source.

The present application relates to a light-emitting film, a method of manufacturing the same, a lighting device and a display device. The present application may provide a light-emitting film capable of providing a lighting device having excellent color purity and efficiency and an excellent color characteristic. The characteristics of the light-emitting film of the present application may be stably and excellently maintained for a long time. The light-emitting film of the present application may be used for various uses including photovoltaic applications, an optical filter or an optical converter, as well as various lighting devices.

A light emitting device includes a board, light emitting element chips, a wavelength conversion member, a transparent bulb, support leads, and a support base. The board has a first surface and a second surface. The second surface is an opposite side to the first surface. The light emitting element chips are mounted on the first surface side. The wavelength conversion member is formed unitarily with a transparent member. The transparent bulb encloses the board and the light emitting element chips. The support leads secure the light emitting element chips inside the transparent bulb. The support base can be threadedly engaged with a conventional light bulb socket along a socket axis. The wavelength conversion member is provided on a first surface side and a second surface side, and is elongated in a longitudinal direction. The light emitting element chips is aligned along a line that extends in the longitudinal direction.

An optoelectronic component includes a housing having a cavity in which an optoelectronic semiconductor chip having an emission face that emits light rays and a transparent potting material are arranged, wherein the cavity includes at least one side wall at least partly reflecting light rays incident on the side wall and reflectivity of which decreases as an operating period of the component increases, conversion particles are embedded into the potting material, which conversion particles convert light rays having a first wavelength incident on the conversion particles into light rays having a second wavelength, and scattering particles are embedded into the potting material, which scattering particles scatter light rays incident on the scattering particles and the scattering capability of which scattering particles increases as the operating period increases.

The present invention relates to a light-emitting diode (LED) structure, which comprises an LED unit. The LED unit is doped with a plurality of fluorescent powders in at least an arbitrary layer on one side of a light-emitting layer. Alternatively, the LED unit includes a plurality of fluorescent powder particles arranged on at least a light-emitting surface of the LED unit. No gel is adopted for disposing or packaging fluorescent powders. Thereby, gel yellowing caused by long-term high-temperature heating of the LED structure will not occur. The yellowing phenomenon will affect the light-emitting efficiency of LED and induce color deviation.

Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.