A QD glass cell includes a glass cell and QD fluorescent powder material. The glass cell includes a receiving chamber, and the QD fluorescent powder being encapsulated within the receiving chamber. A manufacturing method of the QD glass cell includes: S101: manufacturing a glass cell comprising a receiving chamber, and the glass cell comprising an injection port transmitting fluid into the receiving chamber; S102: manufacturing fluid QD fluorescent powder material; S103: filling the fluid QD fluorescent powder material into the receiving chamber via the injection port; S104: applying a curing process to the fluid QD fluorescent powder material within the receiving chamber; and S105: sealing the injection port by hot melting to obtain the QD glass cell. In addition, the above QD glass cell may be applied to LED light source.

A method of manufacturing a light emitting device including: forming a supporting body on a mounting surface of each of semiconductor light emitting elements; arranging the semiconductor light emitting elements to be spaced apart from each other by a predetermined distance; and forming a wavelength conversion layer to continuously cover an upper surface and side surfaces of at least one of the semiconductor light emitting elements. The forming the wavelength conversion layer includes spraying a slurry provided by mixing particles of a wavelength conversion member and a thermosetting resin in a solvent onto the upper surface and the side surfaces of the semiconductor light emitting element, so that a thickness of the wavelength conversion layer at a lower portion of the side surfaces of the supporting body is smaller than the thickness on the upper surface and the side surfaces of the semiconductor light emitting element.

A silicone-based encapsulating material composition contains a bifunctional the silicone resin (A), a multifunctional thermosetting silicone resin having a hydroxyl group (B), and a curing catalyst (C). In the composition, a weight-average molecular weight of the component (A) is 300 to 4,500, a mass ratio of the component (B) relative to a total mass of the component (A) and the component (B) is 0.5% by mass or more and less than 100% by mass, an average functional number of the component (B) is 2.5 to 3.5, and the repeating units constituting the component (B) which are trifunctional account for 50% by mass or more relative to a total mass of the component (B). A visible light transmittance measured at an optical path length of 1 cm and a wavelength of 600 nm is 70% or higher.

A method of making an LED device and an LED device using a high-silica, fully-sintered glass substrate is provided. The high-silica substrate is at least 99% silica and is thin, such as less than 200 m in thickness. A phosphor containing layer is deposited on to the substrate and is laser sintered on the substrate such that a portion of the sintered phosphor layer embeds in the material of the substrate.

In one embodiment, a device can comprise: a light emitting diode located in a housing. The housing is formed from a polymer composition comprising: a polymer material, wherein the polymer material comprises at least one of polyolefins, polyesters, cyanoacrylate, cellulose triacetate, ethyl vinyl acetate, propyl vinyl acetate, polyvinylbutyral, polyvinyl chloride, polycarbonate, polyethylene naphthalate, polyurethane, thermoplastic polyurethane, polyamide, polymethyl methacrylate, polystyrene, cellulose nitrate, and combinations comprising at least one of the foregoing polymer materials; and a coated conversion material wherein the coated conversion material comprises an inorganic material that converts radiation of a certain wavelength and re-emits of a different wavelength. The coated conversion material can have a coating comprising at least one of a silicone oil and amorphous silica and, after the coated conversion material has been exposed to an excitation source, it can have a luminescence lifetime of less than 10.sup.4 seconds when the excitation source is removed.

Provided is a light-emitting device that has a high emission efficiency, excellent stability and temperature properties, and that generates light having a high color rendering property sufficient for practical use. This semiconductor light-emitting device comprises a semiconductor light-emitting element that emits blue light, a green phosphor that absorbs the blue light and emits green light, and an orange phosphor that absorbs the blue light and emits orange light, and is characterized in that the orange phosphor is an Eu-activated -SiAlON phosphor having an emission spectrum peak wavelength within a range of 595 to 620 nm.

The present application relates to a light-emitting film, a method of manufacturing the same, a lighting device and a display device. The present application may provide a light-emitting film capable of providing a lighting device having excellent color purity and efficiency and an excellent color characteristic. The characteristics of the light-emitting film of the present application may be stably and excellently maintained for a long time. The light-emitting film of the present application may be used for various uses including photovoltaic applications, an optical filter or an optical converter, as well as various lighting devices.

A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1: ##STR00001##
a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2: ##STR00002## wherein in Chemical Formulae 1 and 2 groups R.sup.2, R.sub.a to R.sub.d, Y.sub.a to Y.sub.d, L.sub.1 and L.sub.2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal being different from the second semiconductor nanocrystal.

Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices.

A method of manufacturing a wavelength conversion member with improved capability of releasing heat from a fluorescent material is provided. The method of manufacturing the wavelength conversion member includes: disposing a fluorescent material paste containing a fluorescent material and a binder on a surface of a light-transmissive body; orienting face-down the surface where the fluorescent material paste is disposed, to settle the fluorescent material in the fluorescent material paste on a side opposite to another side of the fluorescent material paste, the another side being in contact with the light-transmissive body; and curing the binder in a state where the fluorescent material has been settled, to form a fluorescent material layer.