A display device may include a light emitting element including a first end having a first surface, and a second end having a second surface parallel to the first surface, an organic pattern that overlaps the light emitting element and exposes the first and second surfaces, a first electrode disposed on a substrate and electrically contacting the first end, and a second electrode disposed on the substrate and spaced apart from the first electrode, and electrically contacting the second end. A surface area of the first surface may be less than that of the second surface. A top surface of the organic pattern may be a curved surface.

Semiconductor nanocrystal structures having silica insulator coatings encapsulating the nanocrystals and methods of fabricating semiconductor nanocrystal structures having silica insulator coatings encapsulating the nanocrystals involve adding a silicon-containing silica precursor species to a solution of nanocrystals, subsequently forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species, and adding additional amounts of the silicon-containing silica precursor species after initial formation of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.

A broadband emission material according to the present invention includes: a fluoride glass containing 20 to 45 mol % of AlF.sub.3, 25 to 63 mol % of alkaline-earth fluorides in total and 3 to 25 mol % of at least one fluoride of element selected from the group consisting of Y, La, Gd and Lu; and ytterbium ions incorporated in the fluoride glass as divalent rare-earth ions so as to serve as a luminescent center, wherein the fluoride glass includes 1 to 15 mol % of at least one halide of element selected from the group consisting of Al, Ba, Sr, Ca and Mg and element selected from the group consisting of Cl, Br and I; and wherein the alkaline-earth fluorides includes 0 to 15 mol % of MgF.sub.2, 7 to 25 mol % of CaF.sub.2, 0 to 22 mol % of SrF.sub.2 and 0 to 5 mol % of BaF.sub.2.

Vertical solid-state transducers (SSTs) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

A light emitting layer including a plurality of light emitting particles embedded within a host matrix material. Each of said light emitting particles includes a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. A method of fabricating a light emitting layer comprising a plurality of light emitting particles embedded within a host matrix material, each of said light emitting particles comprising a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. The method comprises providing a dispersion containing said light emitting particles, depositing said dispersion to form a film, and processing said film to produce said light emitting layer.

A wavelength converting member is provided, comprising a sealed capsule at least partly made of sintered polycrystalline ceramic, for example sintered polycrystalline alumina, said capsule defining at least one sealed cavity; anda wavelength converting material contained within said sealed cavity. The wavelength converting member has high total forward transmission of light, high thermal conductivity, high strength and provides excellent protection for the wavelength converting member against oxygen and water. The wavelength converting member can advantageously be applied in a light emitting arrangement or as a color wheel for a digital image projector.

The present invention pertains to a fluorescent-material-containing resin sheet to be used as a light-emitting element. The present invention addresses the problem of obtaining a fluorescent-material-containing resin sheet which exhibits excellent formability, favorable light resistance, and favorable heat resistance, and when used as a light-emitting element, has high brightness and low variation in light emission between chips. As a means of solving this problem, this fluorescent-material-containing resin sheet contains a fluorescent material, a resin, and metal oxide particles (I) having an average particle diameter of 10-200 nm, wherein the amount of the fluorescent material contained therein is 250-1000 parts by mass per 100 parts by mass of the resin. Preferably, this sheet also contains metal oxide particles (II) having an average particle diameter of 300-1000 nm, and as a separate embodiment, preferably contains silicone fine particles.

Provided are a light emitting diode, a method of manufacturing the same, and a use thereof. The light emitting diode having excellent initial light flux and excellent color uniformity and dispersion, the method of manufacturing the same, and the use thereof may be provided.

The invention provides a device (1) comprising (i) a luminescent concentrator (100), the luminescent concentrator (100) comprising a waveguide (4000) having a radiation input face (4100), a radiation exit face (4200), and a width (W) defined by the radiation input face (4100) and an opposite face (4500), the waveguide (4000) comprising a radiation converter element (20) distributed in the waveguide (4000) with a converter concentration; (ii) a solid state light source (10) configured to irradiate the radiation input face (4100) of the waveguide (4000) with solid state light source radiation (11); wherein the radiation converter element (20) is configured to absorb at least part of the light source radiation (11) and to convert into radiation converter element radiation (21), and wherein the converter concentration is at least three times higher than necessary to absorb 98% of the light source radiation (11) over the width (W) of the waveguide (4000).

There is herein described a method for forming a ceramic wavelength converter assembly which achieves a direct bonding of an alumina-based ceramic wavelength converter to an alumina-based ceramic substrate such as polycrystalline or sapphire. The method comprises applying a silica-containing layer between the converter and the substrate and then applying heat to bond the converter to the substrate to form the ceramic wavelength converter assembly. Because direct bonding is achieved, the ceramic wavelength converter may operate at much higher incident light powers than conventional silicone glue-bonded converters.