An antenna comprising; a substrate; a continuous film of yttrium barium copper oxide (YBCO) disposed on the substrate having first and second regions, wherein the first region has a first oxygen doping level and wherein the second region has a second oxygen doping level that is different from the first oxygen doping level; a nano-scale conductive structure, shaped to resonate at a terahertz (THz) frequency, disposed on a boundary between the first and second regions; and a conductive path electrically connected to the first and second regions and to the conductive structure such that induced current in the structure due to incoming THz radiation heats the boundary thereby creating a thermal gradient, which results in the generation of Seebeck effect voltage.

A thermoelectric power generation device including: a heating unit having a heat medium passage in which a heat medium flows; a cooling unit having a cooling liquid passage in which a cooling liquid flows; a thermoelectric element having the heating unit and the cooling unit so as to generate power by utilizing a temperature difference between a condensation temperature of the heat medium and a temperature of the cooling liquid; a power generation output detection unit configured to detect a power generation output of the thermoelectric element; a heat medium pressure detection unit configured to detect a pressure of the heat medium; a storage unit for storing, in advance, a relationship between a power generation output of the thermoelectric element and the pressure of the heat medium; and an abnormality detection unit configured to detect an abnormality taking place in the thermoelectric power generation device.

A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by A.sub.x-cB.sub.y with value of x being smaller by c with respect to a compound A.sub.xB.sub.y according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.

Integrated cooling device based on Peltier effect and manufacturing method thereof are provided. The device comprises one or more first heat dissipation structures around a device area. Each first heat dissipation structure comprises first N-type deep doped regions and first P-type deep doped regions arranged alternately, first vias, and first metal interconnection layers. The first vias are respectively located on two ends of each first N-type and each first P-type deep doped region. The first metal interconnect layers connect the first vias and such that the first heat dissipation structures are connected as a first S-shaped structure. When the first S-shaped structure is turned on, heat in the first N-type deep doped regions and the first P-type deep doped regions flows from a side close to the device area to its other side away from the device area, so as to realize heat dissipation in the device area.

To provide a thermoelectric conversion material having low environmental load and an excellent thermoelectric figure of merit ZT and a thermoelectric conversion module including the thermoelectric conversion material. A thermoelectric conversion material of the present invention is characterized by being a compound represented by Chemical Formula (1).
Cu.sub.26-xM.sub.xA.sub.2E.sub.6-yS.sub.32  (1)
In Chemical Formula (1), M represents a metal material including at least one of Mn, Fe, Co, Ni, and Zn; A represents a metal material including at least one of Nb and Ta; E represents a metal material including at least one of Si, Ge, and Sn; x represents a numerical value of 0 or more and 4 or less; and y represents a numerical value of more than 0 and 1 or less.

A structure, system, and method directed to building dwellings, shopping areas, government offices, towns, factories, hospitals and the like on the moon. The structure, system, and method utilize horizontal hole cavities on the moon such that dwellings, shopping areas, factories, government offices, towns, unmanned robot devices, and the like are placed in the horizontal hole cavities where cosmic rays and ultraviolet are not directly incident. Additionally, vertical hole cavities are utilized for building elevators and stairs. In addition, pipes supplying oxygen produced by photosynthesis devices on the moon's surface and carbon dioxide produced by humans in the cavity are used as conduits.

Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.

A thermoelectric fabric may include a plurality of first threads and second threads. The first threads may be alternately formed by p-doped and n-doped thread portions and electrically conductive first thread portions and second thread portions arranged in between. The first thread portions may form a hot side of the fabric, and the second thread portions may form a cold side. The first threads may form one of warp threads or weft threads of the fabric, and the second threads may form the other of the warp threads or weft threads. On at least one of the first thread portions of at least one of the plurality of first threads, a temperature control structure with at least one temperature control element for cooling the hot side may be present.

An electrical power generation system has a thermal battery and a thermoelectric module positioned proximate to the thermal battery. The thermoelectric module has a first side thermally coupled to the exterior of the housing; and an electrical circuit configured to conduct electrical current from the thermoelectric module to an electrical load. The electrical circuit can be configured to conduct electrical current from the thermal battery to the electrical load while the voltage produced by the thermal battery is above a threshold and to conduct electrical power from the thermoelectric module when the voltage produced by thermal battery drops below the threshold.

The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.